Design for millimeter-wave applications in silicon technologies

Cathelin, Andreia; Martineau, Baudouin; Seller, Nicolas; Douyere, S.; Gorisse, J.; Pruvost, Sébastien; Raynaud, C.; Gianesello, Frédéric; Montusclat, S.; Voinigescu, S.P.; Niknejad, Ali M.; Belot, Didier; Schoellkopf, J.-P.

doi:10.1109/esscirc.2007.4430343

Cited by 30 publications

(15 citation statements)

References 23 publications

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“…A conventional microstrip transmission line would then present for m or m and for m or m. Similarly, the losses of these SW microstrip transmission lines are between 0.6-1 dB/mm at 60 GHz. This value, which is obtained on a low-cost substrate, is very comparable to the classical insertion loss in conventional microstrip transmission lines on well-controlled integrated technologies [18]. Finally, the quality factor is higher than 32 and up to 47 at 60 GHz.…”

Section: Experimental Measurementsmentioning

confidence: 68%

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Serrano

Franc

Assis

et al. 2014

IEEE Trans. Microwave Theory Techn.

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In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.

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Section: Experimental Measurementsmentioning

confidence: 68%

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Serrano

Franc

Assis

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…1. In the first stage, M1 has a width of 40µm (40 x 1µm) chosen to provide sufficient gm while biasing the transistor for minimum NF (0.15mA/ µm) [5]. Transistor's length of 40nm is chosen to reduce the gate resistance (Rg) and hence Rn in (1), since in 28nm Rg has a considerable contribution to the thermal noise of the transistor.…”

Section: A Lna Design Considerationsmentioning

confidence: 99%

A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C

Medra

Giannini

Guermandi

et al. 2014

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27℃ to 125℃. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125℃ both the LNA and the PA are functional with NF < 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.Index Terms -Automotive Radar, Spillover, 79GHz CMOS LNA , 79GHz CMOS PA, Variable gain.

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“…Since several years full Silicon technologies represent the favorite candidate for technology integration platform for millimeter-waves designs [1], [2]. First of all, the very high frequency performances of the Silicon active devices have dramatically increased over the past years, featuring both f T and f max close or even higher than 200GHz.…”

Section: Complete Solutionsmentioning

confidence: 99%

(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications

Cathelin

Martineau

Seller

et al. 2008

2008 IEEE Radio Frequency Integrated Circuits Symposium

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This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration solutions that take benefit of the intrinsic performances of the active device while minimizing the loss effects introduced by the BEOL. Finally, perspectives regarding future challenges in terms of system integration are discussed.

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Design for millimeter-wave applications in silicon technologies

Cited by 30 publications

References 23 publications

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C

(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications

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Design for millimeter-wave applications in silicon technologies

Cited by 30 publications

References 23 publications

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125&#x00B0;C

(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications

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About

A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C