A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C

Abstract

This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27℃ to 125℃. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125℃ both the LNA and the PA are functional with NF < 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.Index Terms -Automotive Radar, Spillover, 79GHz CMOS LNA , 79GHz CMOS PA, Variable gain.

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

“…Notably, the lowest temperature, RT, and highest temperature are only investigated in several reports [10,11]. Moreover, the specific temperature range such as 20 • C-80 • C [12], 0 • C-100 • C [13], 10 • C-90 • C [14], or 27 • C-125 • C [15] may be unable to grasp the performance changes comprehensively. This means that if its performance deteriorates to an uncertain level, the permanent failure of MMIC PA may happen.…”

20.10 A 68.1-to-96.4GHz variable-gain low-noise amplifier in 28nm CMOS

“…Prior works on CMOS car radar transceivers have shown the feasibility of low noise amplifiers at 79GHz. However, the bandwidth of these systems is limited to about 10GHz [2,3], which is not enough. This paper presents a 28nm bulk CMOS LNA for E-Band applications that employs transformer-based 4 th order inter-stage matching networks to achieve 29.6dB gain over 28.3GHz -3dB bandwidth (BW-3dB), resulting in a GBW product in excess of 0.8THz.…”

An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS

“…This paper presents a variable-gain amplifier (VGA) fabricated in 40-nm CMOS technology in E-band for the unified V2X and radar application. As shown in Figure 1, there are several methods to tune amplifier gain such as the attenuator control technique [4][5][6], current steering technique [7][8][9][10][11], and digital switching technique [12][13][14]. Insertion of an attenuator between constant gain blocks provides reliable gain control and wideband operation at the cost of relatively high loss and degradation in the noise performance, particularly in the millimeter-wave frequency band.…”