Design considerations for integrated high-frequency p-channel JFETs

Nanver, L.K.; Goudena, E.J.G.

doi:10.1109/16.7406

Cited by 13 publications

(1 citation statement)

References 7 publications

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“…In this paper ring-gate junction field-effect transistor (JFET) test structures [6] are presented that are designed to give an electrical means of monitoring the position and influence of residual defects after junction formation by implantation and ELA. The design parameters and measurement methodologies which are important for achieving accurate and sensitive measurements are discussed and examples of measurements are given showing that such a method can be very useful for optimizing the implantation and laser anneal parameters.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

Liu

Gonda

Scholtes

et al. 2006

2006 International Workshop on Junction Technology

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A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

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Section: Introductionmentioning

confidence: 99%