Design considerations for high-current photodetectors

Williams, K.J.; Esman, R.D.

doi:10.1109/50.779167

Cited by 179 publications

(72 citation statements)

References 33 publications

(77 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This results in reduction of electron velocity and degradation of bandwidth and output power. It was suggested that the spacecharge suppression of electric field could be compensated by a fixed distribution of background dopants [32], namely the method of charge compensation. In the following, the space-charge effect in the collector and the technique of charge compensation with various doping levels will be investigated by analyzing the energy band profile and the distribution of the electric field.…”

Section: Collection Layer Designmentioning

confidence: 99%

Design of broadband and high-output power uni-traveling-carrier photodiodes

Zhang

2016

Optics Communications

View full text Add to dashboard Cite

a b s t r a c tIn this paper, the bandwidth and saturation current of uni-traveling-carrier photodiode (UTC-PD) is investigated by using physics-based modeling. To further improve the performance, novel device structures are proposed. On the one hand, graded bandgap structure is employed in the absorption layer. It is shown that similar to the effect of graded doping method, the electric field in the absorption layer is increased, and thus the bandwidth is improved. Moreover, both the graded doping and graded bandgap structure are optimized. It is found that for the considered UTC-PD, combining use of the optimized graded doping and graded bandgap structure in the absorption layer leads to an improvement of 39.4% in bandwidth. On the other hand, linear doping profile and Gaussian doping profile are proposed to be used in the collection layer. It is shown that the distribution of electric field in the depletion region is improved, which leads to better saturation performance. For the considered UTC-PD, by using the optimized linear doping profile and the Gaussian doping profile, the improvement in saturation current is 18.7% and 25.8%, respectively.

show abstract

Section: Collection Layer Designmentioning

confidence: 99%

Design of broadband and high-output power uni-traveling-carrier photodiodes

Zhang

2016

Optics Communications

View full text Add to dashboard Cite

show abstract

“…Therefore, it is important to have a clear understanding of the factors that contribute to the failure mechanism of the PDs at high power operation. Williams and Esman compared surface-illuminated and waveguide PDs and showed that waveguide PDs have advantages over surface-illuminated PDs because the thermal impedance due to the heat source in the former is long and narrow [24]. In this context, distributed photodetectors are even superior in performance because the heat is further distributed in much longer length.…”

Section: Failurementioning

confidence: 99%

High power and highly linear monolithically integrated distributed balanced photodetectors

Islam¹,

Jung

Itoh

et al. 2002

J. Lightwave Technol.

View full text Add to dashboard Cite

Abstract-A distributed balanced photodetector with high saturation photocurrent and excellent linearity has been experimentally demonstrated. The maximum linear direct current (dc) photocurrent of 33 mA per branch is equivalent to 66mA in single-ended photodetectors. A setup for investigating the alternating current (ac) linearity of the receiver is proposed and experimentally demonstrated. The receiver exhibits high ac linearity, even under high power operation. The bandwidth of the receiver remains unchanged when the effective dc photocurrent is varied from 1 mA to 21 mA. The distribution of photocurrents was also measured. Device length for optimum radiofrequency (RF) performance is calculated and implemented in the design. A correlation between the dark current of the photodiodes and their failure mechanism has been established. Analyzing the failure mechanism, junction diodes are found to be more suitable for high power applications.Index Terms-Analog fiber optic links, balanced photodetectors, failure mechanism, high photocurrent, high power photodiodes, metal-semiconductor-metal (MSM), microwave photonics, optical receivers, p-i-n, radiofrequency (RF) photonics.

show abstract

“…Space charge effects and thermal runaway are the primary factors limiting photodetector high power operation [1]. Large photocurrent density in the absorption regions can screen the applied electric field leading to a lowering of the photogenerated carrier velocity and, ultimately, the complete collapse of the applied electric field [2].…”

Section: Introductionmentioning

confidence: 99%

High‐Power Distributed Photodetectors for RF Photonic Applications

Iezekiel

2009

Microwave Photonics

View full text Add to dashboard Cite

Photodetector linearity is of paramount importance in external intensity modulated direct detection (IMDD) analogue fibre-optic links. This realization has created a demand for high bandwidth, high saturation current photodetectors. Additionally, high current photodetectors have the potential to simplify receiver designs by eliminating the need for impedance matched electronic amplifiers. Applications that can benefit from high-performance photodetectors include antenna remoting, fibre-radio and terahertz signal generation by photomixing.The system level benefits of high current photodetectors may be seen by plotting the link RF gain (G RF ), noise figure (NF), and spurious free dynamic range (SFDR) versus photocurrent for a hypothetical external IMDD link. The curves in Figure 3.1 clearly demonstrate the benefits of high current photodetectors. As the photocurrent increases so does the link performance until laser RIN dominates the noise floor. Link performance may be further improved by utilizing balanced detection, in which case laser RIN is suppressed, the shot-noise limited regime is extended, and with increasing photocurrent, G RF , NF and SFDR improve dramatically.Space charge effects and thermal runaway are the primary factors limiting photodetector high power operation [1]. Large photocurrent density in the absorption regions can screen the applied electric field leading to a lowering of the photogenerated carrier velocity and, ultimately, the complete collapse of the applied electric field [2]. Consequently, RF photoresponse decreases and nonlinearities generated by the photodetector start to degrade the system dynamic range. Microwave Photonics: Devices and Applications Edited by Stavros Iezekiel

show abstract

Design considerations for high-current photodetectors

Cited by 179 publications

References 33 publications

Design of broadband and high-output power uni-traveling-carrier photodiodes

Design of broadband and high-output power uni-traveling-carrier photodiodes

High power and highly linear monolithically integrated distributed balanced photodetectors

High‐Power Distributed Photodetectors for RF Photonic Applications

Contact Info

Product

Resources

About