2018 IEEE Applied Power Electronics Conference and Exposition (APEC) 2018
DOI: 10.1109/apec.2018.8341000
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Design and test of the bidirectional solid-state switch for an 160kV/9kA hybrid DC circuit breaker

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Cited by 16 publications
(9 citation statements)
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“…A lot of emerging innovative HVDC CBs are under development or have commenced operation. The detailed current interruption technology, variety of topologies and key performance indicators of these HVDC CBs can be found in [4,7,11,15,16,[23][24][25][26][27][28][29][30]. With these many HVDC CBs flourishing, a unified standard to verify the performance of the equipment is necessary.…”
Section: Hvdc Cb Topologiesmentioning
confidence: 99%
“…A lot of emerging innovative HVDC CBs are under development or have commenced operation. The detailed current interruption technology, variety of topologies and key performance indicators of these HVDC CBs can be found in [4,7,11,15,16,[23][24][25][26][27][28][29][30]. With these many HVDC CBs flourishing, a unified standard to verify the performance of the equipment is necessary.…”
Section: Hvdc Cb Topologiesmentioning
confidence: 99%
“…The surface of heatsinks is not flat hence the contact between heatsinks and power modules is not tight and effective. The warpage of contact electrodes of the press-pack IGBT module is produced and also leads to the uneven pressure distribution among parallel chips [21][22] which is different from the configuration in [14][15]. However, as the typical and common method to clamp the press-pack power modules in high power converter applications, the LPP packaging technology is chosen and the mechanical stress distribution is investigated in this paper.…”
Section: A Challenges To Mechanical Structure Of Lpp Power Stackmentioning
confidence: 99%
“…However, the lumped pressure contact will lead to uneven pressure distribution among the chips. In [14,Fig. 15] and [15,Fig.…”
Section: Introductionmentioning
confidence: 99%
“…The topology MT_b [5], which is the full‐bridge IGBT module, contains four IGBT modules and a snubber circuit of the capacitor. The topologies MT_c [19] and MT_d [20], which is a full‐bridge rectifier module, contains four diodes and two IGBT modules with RC or RCD snubber circuits, respectively. The topology MT_e is composed of two series‐connection IGBT stacks and four series‐connection diode stacks, where each IGBT level has its own RCD snubber circuit and each diode level has its own RC snubber circuit.…”
Section: Comprehensive Comparisons Of Different Hvss Topologiesmentioning
confidence: 99%