Design and Simulation of Two-Dimensional Superlattice Steep Transistors

Long, Pengyu

doi:10.1109/led.2014.2364593

Cited by 5 publications

(8 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. Devices such as superlattice-FETs [1],Ultra Thin Body(UTB)-FETs and FinFETs consist of strained materials with different lattice constant. Quantitative analysis of those devices requires the reliable prediction of the bandgaps, effective masses in strained heterostructures.…”

mentioning

confidence: 99%

Transferable tight-binding model for strained group IV and III-V materials and heterostructures

et al. 2016

Self Cite

View full text Add to dashboard Cite

It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V materials. The tight binding model is parameterized with respect to Hybrid functional(HSE06) calculations for varieties of strained systems. The tight binding calculations of ultra small superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of tight binding model to superlattices demonstrates that transferable tight binding model with nearest neighbor interactions can be obtained for group IV and III-V materials. PACS numbers:arXiv:1603.05266v2 [cond-mat.mtrl-sci]

show abstract

mentioning

confidence: 99%

Transferable tight-binding model for strained group IV and III-V materials and heterostructures

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…With transistors reaching their scaling limit there is a need to move beyond traditional designs . Interesting novel devices have been proposed that base their theoretical superior electronic performances on specific heterostructures, particular crystal orientations and the anisotropy of III–V energy bands, − planar gating enabled by lateral growth, and buried oxides. Energy filters that reduce injection into the channel of electrons having energy above the source Fermi energy have been proposed for nanowire field-effect transistor (FET) devices .…”

Section: Introductionmentioning

confidence: 99%

“…Energy filters that reduce injection into the channel of electrons having energy above the source Fermi energy have been proposed for nanowire field-effect transistor (FET) devices . Super lattice (SL) filters have also been proposed for planar and fin FETs with low subthreshold swings attractive for low-power logic applications …”

Section: Introductionmentioning

confidence: 99%

Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy

Brunelli

Goswami

Markman

et al. 2019

Crystal Growth & Design

View full text Add to dashboard Cite

We report on the successful integration of multiple atomically thin horizontal heterojunctions (HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined template of dielectric material. InAs, GaAs, and InGaAs layers were included in laterally grown InP structures and characterized to show abrupt interfaces and crystalline material. The orientation of the templates and the substrate is chosen so that a flat vertical facet appears at the growth front allowing for the HJs to be horizontal, unlike typical planar epitaxy. This enables the design of recently proposed novel electronic HJ devices like triple-HJ tunnel field-effect transistors.

show abstract

“…Reported simulations of superlattice MOSFETs predicted appealing device performances with SS values ranging from 10 to 39mV/dec 4,5,6 using coherent quantum transport models. In these models electrons travel through a quantum mechanical defined miniband coherently, even though the superlattice-shaped source contains a very high carrier density of the order of 10 18 -10 19 /cm 3 .…”

Section: Introductionmentioning

confidence: 99%

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Long

Huang

Jiang

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source suggest that scattering may significantly degrade the ideal device performance. Such effects of electron scattering and decoherence in the contacts of superlattice MOSFETs are examined through a multiscale quantum transport model developed in NEMO5. This model couples NEGF-based quantum ballistic transport in the channel to a quantum mechanical density of states dominated reservoir, which is thermalized through strong scattering with local quasi-Fermi levels determined by drift-diffusion transport. The simulations show that scattering increases the electron transmission in the nominally forbidden minigap therefore degrading the subthreshold swing (S.S.) and the ON/OFF DC current ratio. This degradation varies with both the scattering rate and the length of the scattering dominated regions. Different superlattice MOSFET designs are explored to mitigate the effects of such deleterious scattering. Specifically, shortening the spacer region between the superlattice and the channel from 3.5 nm to 0 nm improves the simulated S.S. from 51mV/dec. to 40mV/dec.

show abstract

Design and Simulation of Two-Dimensional Superlattice Steep Transistors

Cited by 5 publications

References 24 publications

Transferable tight-binding model for strained group IV and III-V materials and heterostructures

Transferable tight-binding model for strained group IV and III-V materials and heterostructures

Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Contact Info

Product

Resources

About