2013
DOI: 10.9790/2834-0456068
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Design and Simulation of RF MEMS Capacitive type Shunt Switch & its Major Applications

Abstract: This article details about the design of a K-band RF-MEMS capacitive type shunt switch and some of its major applications. The electrostatic and electromagnetic analyses of the designed structure have been performed using MATLAB and commercially available EM solvers. FEM and MOM both tools have been used extensively for full-wave analysis. Two major applications (SPDT switch and reconfigurable Antenna) have been studied here. The design is based upon 675 µm thick high resistive Silicon (ρ > 8KΩ-cm).

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Cited by 24 publications
(10 citation statements)
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References 14 publications
(14 reference statements)
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“…The membrane actuated by the electrostatic force locates in the down position when the driving voltage applies to the signal and ground lines of CPW. The RF signal in the signal line of CPW is coupled to the ground lines and as such a high capacitance generated between the membrane and the signal line ofCPW [5] [6] [7]. …”
Section: F Working Principle Of This Rf Mems Switchmentioning
confidence: 99%
“…The membrane actuated by the electrostatic force locates in the down position when the driving voltage applies to the signal and ground lines of CPW. The RF signal in the signal line of CPW is coupled to the ground lines and as such a high capacitance generated between the membrane and the signal line ofCPW [5] [6] [7]. …”
Section: F Working Principle Of This Rf Mems Switchmentioning
confidence: 99%
“…The membrane actuated by the electrostatic force locates in the down position when the driving voltage applies to the signal and ground lines of CPW. The RF signal in the signal line of CPW is coupled to the ground lines owing that a high capacitance generated between the membrane and the signal line of CPW [3] [4]. The MEMS switch is designed by two short sections of transmission line and a lumped CLR model as shown in the Fig.…”
Section: Principle Of Operationmentioning
confidence: 99%
“…The static behavior of the ROM model is validated using the commercial FEM software ANSYS. Most of previously reported MEMS SPDT switches, in previous published research, have been implemented using two identical switching structures Single-Pole Single-Through SPST switch (Updesh Sharma et al 2014;Sukomal Dey et al 2013;Prolay Verma et al 2013;Poonam Verma et al 2013;Daisuke Yamane et al 2011;Sergio P. et al 2001). In the present study, we propose a novel design of a SPDT MEMS switch that is based by only one SPST switch.…”
Section: Introductionmentioning
confidence: 97%