Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch

Sravani, K. Girija; Rao, K. Srinivasa; Prathyusha, D.; Kiran, B. V. Sai; Kumar, Bharath S.; Kumar, Rajesh; Tarun, Kollati

doi:10.1007/s00542-019-04505-0

Cited by 8 publications

(1 citation statement)

References 25 publications

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“…Nowadays, the theory of RF MEMS switches has obtained rapid development. Many designs have achieved better isolation at large bandwidth but at a cost of a high pull-down voltage of 10-40V [5][6][7][8][9][10][11][12][13][14][15][16]. The electrostatic drive switches are hard to integrate into CMOS chip systems reason of high actuation voltages.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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This paper presents a novel radio frequency micro-electro-mechanical systems (RF MEMS) switch fabricated on a high resistivity silicon substrate. Slots, like square interleaved slots and split-ring slots, are used in the transmission-line to get better RF performance. Comparing three switch structures with different slot cells, the switch with square interleaved slots is suitable at Ka-band (26 ~ 40GHz), but the switch with split-ring slots can be applied to RF circuits at 10-60GHz. The switch with split-ring slots is optimal for the switching mechanism in diverse 5G RF circuitry. When it works at 30GHz, it shows a low insertion loss better than − 0.256dB, a low re-turn loss better than − 22dB, and the isolation is observed below − 39dB. Its “pull-down” voltage is 6.5V. Due to its outstanding performance, the proposed RF MEMS switch is suitable for various applications.

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