Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Kuo, Yen−Kuang; Chen, Fang‐Ming; Chang, Jih‐Yuan; Huang, Man-Fang; Liou, Bo Ting; Shih, Ya-Hsuan

doi:10.1109/jqe.2019.2957575

Cited by 20 publications

(11 citation statements)

References 23 publications

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“…The energy band affects the migration and distribution of carriers and further influences the performance of the device [22]. Therefore, it is important to study the changes in the energy band.…”

Section: Resultsmentioning

confidence: 99%

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

et al. 2022

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To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crosslight software is used to simulate and compare the DUV-LDs with rectangular superlattice (RSL) EBL and RSL HBL, GRSL EBL and GRSL HBL, and GRSL EBL and GTSL HBL. The simulation results indicate that GRSL EBL and GTSL HBL increase the carrier concentration in the quantum wells, reduce the electron leakage in the p-type region and the hole leakage in the n-type region, increase the radiation recombination rate, reduce the threshold voltage and threshold current, and increase the electro-optical conversion efficiency and output power of DUV-LDs more effectively.

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Section: Resultsmentioning

confidence: 99%

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

et al. 2022

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“…The LEE of DUV LED is set to be 15%. The device simulation is calibrated with the measurement results of the fabricated device, and the parameters implemented is obtained through the curve-fitting procedure, which is a reasonable and feasible method [19]. The I-V characteristic is influenced by polarization charge screening coefficient, and the SRH lifetime as well as Auger recombination settings contribute to Light output power-Current (L-I) characteristics.…”

Section: Device Structures and Simulation Parametersmentioning

confidence: 99%

“…Therefore, electron leakage suppression and promoting hole injection efficiency are of great importance. Carrier transport of DUV LEDs is very sensitive to the energy band structure of the electron blocking layer (EBL) and multiple quantum wells (MQWs) [19], [20]. To promote carrier injection efficiency, various methods have been proposed through energy band engineering according to the review Ref.…”

Section: Introductionmentioning

confidence: 99%

Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Tao

Fan

et al. 2021

IEEE Photonics J.

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In this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DUV LED is boosted by 104% at 60 mA with the same structure of Ga-polar conventional DUV LED. Furthermore, the higher operation voltage of N-polar DUV LED induced by the large energy difference between the p-type interlayer and the p-GaN hole supplier is noted. To reduce the operation voltage of N-polar DUV LED, the structure with a staircase-like p-type interlayer is proposed. The incorporation of staircase-like aluminum composition p-type interlayer mitigates the large potential barrier for holes injection, and the operation voltage is comparable to the Ga-polar DUV LED. The reduced operation voltage further promotes the WPE of N-polar DUV LEDs. Thus, combined with the promoted electron blocking ability and the mitigated potential barrier for holes of N-polar DUV LED, the greatly enhanced WPE is as high as 4.9% at 60 mA, which is 2.88 times higher than the Ga-polar DUV LED.

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“…However, the polarization charge, potential height, trade-off between electron blocking and hole injection, carrier accumulation, and recombination in the SL must all be considered in the SL design. 10,26 The physics is more complex with a discussion of the band offset ratio. Moreover, the AlGaN/AlGaN SL-EBL design principle has scarcely been reported; thus, optimizing the structure perfectly by simply playing the simulation is not straightforward.…”

Section: Introductionmentioning

confidence: 99%

“…However, the polarization charge, potential height, trade-off between electron blocking and hole injection, carrier accumulation, and recombination in the SL must be considered in the SL design. 10,26…”

Section: Introductionmentioning

confidence: 99%

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

et al. 2022

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Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Cited by 20 publications

References 23 publications

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

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