Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Abstract

To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular superlattice (GRSL) electron blocking layer (EBL) and the graded trapezoidal superlattice (GTSL) hole blocking layer (HBL) in this paper. Crosslight software is used to simulate and compare the DUV-LDs with rectangular superlattice (RSL) EBL and RSL HBL, GRSL EBL and GRSL HBL, and GRSL EBL and GTSL HBL. The simulation results indicate that GRSL EBL and GTSL HBL increase the carrier concentration in the quantum wells, reduce the electron leakage in the p-type region and the hole leakage in the n-type region, increase the radiation recombination rate, reduce the threshold voltage and threshold current, and increase the electro-optical conversion efficiency and output power of DUV-LDs more effectively.

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

“…type HBL and W-type EBL, which can enable UVD-LED to achieve better optical output power and IQE [14]. The design of gradient rectangular superlattice (GRSL) EBL and gradient trapezoidal superlattice (GTSL) HBL can improve the radiation recombination rate of UVD-LD and reduce the threshold voltage [15]. In addition, there are also some structural designs related to the EBL and HBL of UVD-LD [16][17][18].…”