Design and modelling of InGaP/GaSb tandem cell with embedded 1D GaAs quantum superlattice

Abstract

The lower photo-generated current in a top cell limits the performance of the tandem solar cell by restricting the short circuit current density. To overcome this, the top cell must be suitably designed which can utilise the excess photo-generated current of the bottom cell. In this proposed work, an InGaP/GaSb tandem cell is designed by incorporating one-dimensional (1D) GaAs quantum superlattice in the top InGaP cell. The model is simulated using the ATLAS device simulator. The performance of the cell is assessed in terms of short circuit current density (J sc), open circuit voltage (V oc), fill factor and efficiency (E ff). A detailed analysis of the top cell is carried out to validate the proposed model. The designed tandem cell shows a significant improvement in terms of J sc (2075.88 mA/cm 2) and E ff (46.58%).