Design and Demonstration of an In-Plane Silicon-on-Insulator Optical MEMS Fabry–Pérot-Based Accelerometer Integrated With Channel Waveguides

Zandi, Kazem; Bélanger, Joseph André; Peter, Yves-Alain

doi:10.1109/jmems.2012.2211577

Cited by 66 publications

(32 citation statements)

References 16 publications

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“…With a high-resolution optical spectrum analyzer (0.01 picometer), the resolution of the ROTE senor can reach 1 × 10 −3 g. Although the sensitivity is a key parameter for the accelerometer, the sensitivity and the acceleration measurement range always should be balanced for the specific application. According to the simulation results, the proposed accelerometer can reach 9 pm/g with measurement range of ±130 g, which is comparable with that of the Fabry-Pérot-based accelerometer (90 nm/g, ±0.263 g) [5], the photonic crystal accelerometer (1.17 nm/g, ±22 g) [25] and the optical microring resonator accelerometer (31 pm/g, ±7 g) [26]. The sensor we proposed has the lowest sensitivity but maximum measurement range among all these optical accelerometers.…”

Section: Theoretical Analysis and Simulationmentioning

confidence: 64%

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect

Jian

Wei

Guo

et al. 2017

Sensors

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Acceleration is a significant parameter for monitoring the status of a given objects. This paper presents a novel linear acceleration sensor that functions via a unique physical mechanism, the resonant optical tunneling effect (ROTE). The accelerometer consists of a fixed frame, two elastic cantilevers, and a major cylindrical mass comprised of a resonant cavity that is separated by two air tunneling gaps in the middle. The performance of the proposed sensor was analyzed with a simplified mathematical model, and simulated using finite element modeling. The simulation results showed that the optical Q factor and the sensitivity of the accelerometer reach up to 8.857 × 10 7 and 9 pm/g, respectively. The linear measurement range of the device is ±130 g. The work bandwidth obtained is located in 10-1500 Hz. The results of this study provide useful guidelines to improve measurement range and resolution of integrated optical acceleration sensors.

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Section: Theoretical Analysis and Simulationmentioning

confidence: 64%

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect

Jian

Wei

Guo

et al. 2017

Sensors

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“…In this scheme, two sets of straight waveguides have been used, one of them with a TM component (L×W = 50×0.35 m 2 ) is used to detect the course movement. On the other hand, the other straight waveguide structure (L×W = 100×0.35 µm 2 ) is dedicated to sense the fine movement of the disk. With this configuration, we can successfully measure a tiny displacement of <0.05 m that corresponds to sub-g resolution over 10 g range.…”

Section: Resultsmentioning

confidence: 99%

“…Traditional MEMS inertia sensors employ large proof mass attached to springs which yield resonant frequency of few kilohertz [1,2]. A variety of transduction mechanism has been used for sensing the proof mass displacement, which includes piezoresistive [3], tunneling [4], thermal [5], capacitive [6], and optical [7].…”

Section: Introductionmentioning

confidence: 99%

“…Capacitive accelerometer can eliminate the trade-off between the sensitivity and bandwidth by implementing a feedback circuit [9]. On the other hand, optically enabled inertia sensors are able to achieve sub nm/g resolution with smaller masses [1,2]. However, those optical detection based systems employ optical resonators or photonics crystal cavities with a narrow transmission bandwidth.…”

Section: Introductionmentioning

confidence: 99%

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Micro-opto-mechanical disk for inertia sensing

Dushaq¹,

Muluget²,

Rasras³

2016

Photonic Sens

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An optically enabled z-axis micro-disk inertia sensor is presented, which consists of a disk-shaped proof mass integrated on top of an optical waveguide. Numerical simulations show that the optical power of laser beam propagating in a narrow silicon nitride (Si 3 N 4 ) waveguide located under the disk is attenuated in response to the vertical movement of the micro-disk. The high leakage power of the TM mode can effectively be used to detect a dynamic range of 1 g -10 g (g=9.8 m/s 2 ). At lest, the waveguide is kept at a nominal gap of 1 m from the proof mass. It is adiabatically tapered to a narrow dimension of W×H = 350×220 nm 2 in a region where the optical mode is intended to interact with the proof mass. Furthermore, the bottom cladding is completely etched away to suspend the waveguide and improve the optical interaction with the proof mass. The proposed optical inertia sensor has a high sensitivity of 3 dB/g when a 50 m-long waveguide is used (normalized sensitivity 0.5 dB/m 2 ) for the vertical movement detection.

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“…Silicon-based suspended microstructures with high quality factors can be applied for frequency-sensitive systems such as accelerometer and gyroscope integrated with electronic systems [18, 19]. The silicon-based process benefits mass production through batch fabrication, and compactness due to small size and IC compatibility.…”

Section: Introductionmentioning

confidence: 99%

Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

Kang

Lee

Yang³

et al. 2015

Nano-Micro Lett.

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A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vertically by external forces. Finite element analysis is used to simulate mechanical behaviors of the designed structure. For the simulation, the ground acceleration spectrum of the 1952 Kern County Earthquake is employed to investigate the structural integrity of the sensor in vibration. Based on the simulation, a prototype VMGFET accelerometer is fabricated from silicon on insulator wafer. According to current–voltage characteristics of the prototype VMGFET, the threshold voltage is measured to be 2.32 V, which determines the effective charge density and the mutual transconductance of 1.545×10−8 C cm−2 and 6.59 mA V−1, respectively. The device sensitivity is 9.36–9.42 mV g−1 in the low frequency, and the first natural frequency is found to be 1230 Hz. The profile smoothness of the sensed signal is in 3 dB range up to 1 kHz.

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Design and Demonstration of an In-Plane Silicon-on-Insulator Optical MEMS Fabry–Pérot-Based Accelerometer Integrated With Channel Waveguides

Cited by 66 publications

References 16 publications

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect

Micro-opto-mechanical disk for inertia sensing

Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

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