2015
DOI: 10.1109/tc.2013.192
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Design and Analysis of 3D-MAPS (3D Massively Parallel Processor with Stacked Memory)

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Cited by 55 publications
(25 citation statements)
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“…According to the 3D-Stacking approach multiple layers of DRAM memory are stacked together with a logic layer that can be application-specific ( [7,8]) or general purpose [9]. In Reference [7] the XNOR-POP architecture was designed to accelerate CNNs for mobile devices.…”
Section: D-stackingmentioning
confidence: 99%
See 1 more Smart Citation
“…According to the 3D-Stacking approach multiple layers of DRAM memory are stacked together with a logic layer that can be application-specific ( [7,8]) or general purpose [9]. In Reference [7] the XNOR-POP architecture was designed to accelerate CNNs for mobile devices.…”
Section: D-stackingmentioning
confidence: 99%
“…In Reference [8] it is proposed an architecture for data intensive applications, where a PIM layer made of memory and application-specific logic is sandwiched between DRAM dies connected together using TSVs. An example of general purpose 3D-stacking is 3D-MAPS in Reference [9]. A multi-core structure is used, and every core is composed of a memory layer and a computing layer.…”
Section: D-stackingmentioning
confidence: 99%
“…Since multilayered electrical integrated circuits [12][13][14] are the prevailing industrial technology, future intrachip optical interconnects should be adapted to the multilayered structure, and an optical interlayer routing scheme will be needed. The proposed device, acting as a bidirectional switchable router between the layers of optical integrated circuits, would be an important component for realizing fully scalable, three-dimensional (3D) electro-optical integrated circuits.…”
Section: Introductionmentioning
confidence: 99%
“…Few 3D integrated memory-logic microprocessors are designed in academia. From the academia, first 3D memory-logic integrated system is fabricated using 130nm GF process, called 3D massively parallel processor with stacked memory (3D MAPS) [5,75] by Georgia Institute of Technology consists of 47,490 I/O TSVs and 6,540 dummy or thermal TSVs, used for heat-dissipation, shown in Figure 2.3. The die occupies an area of 25mm 2 .…”
Section: Overviewmentioning
confidence: 99%
“…With the increase in the number of integrated multi-core and memory blocks for a cloud server, the number of signal I/Os grows dramatically, hence there is an emerging need to develop high data-rate and low power I/O circuits [157,158]. Though 3D integration by stacking several layers of dies vertically using through-silicon via (TSV) I/O [133,29,31,159,37,75,160,5,96] provides a scalable integration, accumulated heat in top layers and complexity of heat removal techniques can limit the flexibility of the design [161,27,28]. As discussed in previous chapters, 2.5D integration by through-silicon interposers (TSIs) in common substrate has a strong heat dissipation capability [10,39].…”
Section: Introductionmentioning
confidence: 99%