Design, Analysis and Evaluation of a Broadband High-Power Amplifier for Ka-Band Frequencies

Neininger, Philipp; John, Laurenz; Brückner, Peter; Friesicke, Christian; Quay, R.; Zwick, Thomas

doi:10.1109/mwsym.2019.8700951

Cited by 24 publications

(17 citation statements)

References 7 publications

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“…A lower power (17 dBm), though on a wider bandwidth (26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40), is achieved in [17] on 130 nm SiGe BiCMOS. This two-stage differential PA features 10 dB gain and is compatible with satellite and ground-based communications and radar applications.…”

Section: A Standard Pasmentioning

confidence: 99%

“…Despite their significant cost and limited availability, SiC substrates have enabled complete modules with superior performance with respect to any competitors (mainly GaAs), especially for applications where absolute performance is more important than cost, such as military, satellite and backhaul. A recent example of a broadband, general purpose PA is presented in [26] (see Fig. 14).…”

Section: A Standard Pasmentioning

confidence: 99%

“…It features a record 19 dBm saturated output power and corresponding PAE in excess of 36% over the range[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] GHz, while achieving the highest reported modulation speed (36 Gb/s 64-QAM) among mm-wave PAs below 50 GHz. Notably, the PAE at 6 dB back-off is higher than 10% over the whole bandwidth.Another recent work where good efficiency is achieved, while targeting high linearity over a wide instantaneous bandwidth, is reported in[111].…”

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confidence: 99%

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A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

128

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Standard Pasmentioning

confidence: 99%

Section: A Standard Pasmentioning

confidence: 99%

mentioning

confidence: 99%

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A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

128

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“…For this research, we analyzed the perspective of broadband parallel power combining in the lower mmW frequency band. A previous design has shown promising results in the same frequency band [20] and is improved upon in this work. As shown in [20], the optimum HEMT periphery for the frequency band in question was found to be an eight finger device with a unit gate width of UGW = 60 µm for a total gate width of TGW = 0.48 mm.…”

Section: Technology and Devicementioning

confidence: 81%

“…To meet these requirements, a three-stage topology was adopted featuring a staging ratio of 1:2, with eight HEMTs in the final stage. Similar to the concept in [20], eight-finger HEMTs with a unit gate width (UGW) of 60 µm each were employed, which equals a total gate width of 3.72 mm in the final stage. To ensure high RL, a balanced topology was implemented using a four-finger Lange coupler.…”

Section: Hpa Designmentioning

confidence: 99%

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Neininger

John

Thome

et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical response in a densely routed, massively parallelized layout. To that end, we develop a comprehensive study on the application of space-mapping techniques toward the design of high-power amplifiers (HPAs). We derive three reference design procedures and compare their performance in terms of convergence, speed, and practicality when laying out a densely routed HPA interstage matching network. Subsequently, we demonstrate the usefulness of the study by designing the networks of a compact three-stage eight-way wideband HPA in the Ka-band. The processed monolithic microwave integrated circuit features a 1-dB large-signal bandwidth of more than 11 GHz (a fractional bandwidth of 32.8%) and thus covers most of the Ka-band with an output power exceeding 6 W in 3 dB of gain compression. This demonstrates the highest combination of power and bandwidth to date using a reactively matched topology in the Ka-band.

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GaN‐Based HEMTs for Millimeter‐wave Applications

Harrouche

Medjdoub

2020

Nitride Semiconductor Technology

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Design, Analysis and Evaluation of a Broadband High-Power Amplifier for Ka-Band Frequencies

Cited by 24 publications

References 7 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

GaN‐Based HEMTs for Millimeter‐wave Applications

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