Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

Persheyev, Saydulla; Goldie, D.M.; Gibson, R. E.; Rose, M. J.; Anthony, Spencer P.; Keeble, D. J.; Robb, KM; Main, C.; Reynolds, S.; Zrinscak, I.

doi:10.1016/s0040-6090(01)01233-0

Cited by 7 publications

(2 citation statements)

References 3 publications

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“…Thin silicon films were prepared using standard Hot-Wire Chemical Vapor Deposition (HWCVD) [6]. The silicon films (~ 100 nm to 5.5 µm) were deposited on Corning 7059 glass substrates, n-type silicon wafers <100>, and also on Cr, Mo, Ti, and V backplanes -of 100 nm thickness, prepared by sputtering on Corning 7059 glass substrates.…”

Section: Methodsmentioning

confidence: 99%

Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission

et al. 2005

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Thin silicon films deposited using the Hot-Wire Chemical Vapor Deposition (HWCVD) technique are studied here for the effect of XeCl excimer laser crystallization on their structural, optoelectronic, and electron field emission properties. Excimer Laser Annealing (ELA) of the silicon thin films indicated increased dark conductivity and reduced optical gap. Encouraging Field Emission (FE) results were obtained from XeCl excimer laser processed HWCVD films on Cr, V, Mo, and Ti backplanes. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE thresholds were also found to be particularly influenced by the backplane material.

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Section: Methodsmentioning

confidence: 99%

Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission

et al. 2005

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“…Our samples were grown by the HWCVD technique using a tungsten filament as a heating element (described elsewhere [18][19][20][21]). To grow nanocrystalline silicon, the hydrogen dilution of silane gas was held at H 2 /SiH 4 = 14, while the substrate temperature was kept constant at 200 • C during the growth.…”

Section: Growth Processmentioning

confidence: 99%

THz generation from a nanocrystalline silicon-based photoconductive device

Daghestani

Persheyev

Cataluna

et al. 2011

Semicond. Sci. Technol.

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Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

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Quantitative hydrogen measurements in PECVD and HWCVD a-Si:H using FTIR spectroscopy

Goldie

Persheyev

2006

J Mater Sci

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Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

Cited by 7 publications

References 3 publications

Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission

Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission

THz generation from a nanocrystalline silicon-based photoconductive device

Quantitative hydrogen measurements in PECVD and HWCVD a-Si:H using FTIR spectroscopy

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