Quantitative hydrogen measurements in PECVD and HWCVD a-Si:H using FTIR spectroscopy

Goldie, D.M.; Persheyev, Saydulla

doi:10.1007/s10853-006-0302-6

Cited by 18 publications

(13 citation statements)

References 14 publications

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“…2c that the systematical changes in stretching vibration intensity do not occur as a function of T s , which differs from the results reported by other groups [1,19]. However, the microstructural factor R* in our experiment, as shown in Table 3, decreases monotonically from 0.69 to 0.5 with the T s increasing from 100 to 250°C.…”

Section: Hydrogen Bonding In Thin Filmscontrasting

confidence: 88%

“…Since the possibility of doping hydrogenated amorphous silicon (a-Si:H) thin film was discovered by Spear and Lecomber, research on a-Si:H thin film attracted increasing attention due to the rapidly increasing use of a-Si:H thin film for a variety of applications, such as solar cells [1][2][3], infrared sensors [4], and thin film transistors [5]. All these applications are based on its unique electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

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Structure and electronic states in a-Si:H thin films

et al. 2012

J Mater Sci

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The hydrogenated amorphous silicon (a-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition at various substrate temperatures. This paper examined the relationship between structural evolution and electronic states of the tested thin films. Raman spectroscopy was used to evaluate the structural evolution in amorphous network. Meanwhile, Fourier transform infrared spectroscopy was applied to explore the change of hydrogen in thin films. Results show that the order of network on short and intermediate scales, the content and bonding mode of bonded hydrogen, as well as the intrinsic stress and silicon coordination defects, and closed rings in the thin films, vary with the deposition temperature. The dielectric spectra of samples were measured using SE850 spectra ellipsometer. The density of electronic band states (DOS) in both valence band and conduction band for a-Si:H thin films was obtained by fitting the measured dielectric spectra. The results, verified by optical measurement, reveal that the effect of hydrogenation on band edge DOS is predominant in comparison with that of network relaxation.

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Section: Hydrogen Bonding In Thin Filmscontrasting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Structure and electronic states in a-Si:H thin films

et al. 2012

J Mater Sci

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“…The films deposited at temperatures higher than [20]. FTIR method can be used for quantitative hydrogen measurements [21], but for transmission experiments the substrate should be transparent in IR range. Figure 6 shows the Raman spectra of as-deposited a-Si:H film and nanosecond-pulse-annealed film.…”

Section: Resultsmentioning

confidence: 99%

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Bugaev

Zelenina

Володин

2012

International Journal of Spectroscopy

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Vibrational properties of hydrogenated silicon-rich nitride (SiN x :H) of various stoichiometry (0.6 ≤ x ≤ 1.3) and hydrogenated amorphous silicon (a-Si:H) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130 • C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si-H bonds. From analysis of the FTIR data of the Si-N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si-H chemical species, and films with hydrogen concentration 30-35% contain mainly Si-H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

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“…Lithium alloying with silicon is responsible for the breaking of Si Si bonds during electrochemical lithiation. [ 85 ] The fi rst steps of electrochemical lithiation are associated with negative-going peaks in the range of the Si H stretching vibrations. However, a high hydrogen concentration is found in the fi lms deposited by plasma-enhanced chemical vapor deposition (PECVD), allowing for the passivation of the dangling bonds otherwise present in amorphous silicon and the relaxation of internal stress in the material.…”

Section: Infrared Evidences For Bulk Lithiationmentioning

confidence: 99%

Spectroscopic Insight into Li‐Ion Batteries during Operation: An Alternative Infrared Approach

Corte

Caillon

Jordy

et al. 2015

Advanced Energy Materials

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special environment for its characterization appear as steps which in most cases might strongly modify the active material. [ 1 ] Benefi ting from characterization techniques able to analyze the electrodes in situ and in operando therefore appears of uttermost importance for obtaining information of direct relevance regarding the electrode processes. We show in the present work that such pieces of information can be obtained by using in situ Fourier-transform infrared (FTIR) spectroscopy in a suitable geometry, which avoids the traditional limitations associated with this technique and allows for quantitative information to be extracted. [ 2 ] This approach therefore brings significant complementary information to other useful techniques operating in the electrochemical environment, which focus either on electrode materials, such as nuclear magnetic resonance (NMR) [ 3,4 ] or X-ray absorption, diffraction or imaging, [ 5,6 ] or on electrode surfaces, such as scanning probe microscopies. [ 7,8 ] Using infrared spectroscopy at the electrochemical interface has already been attempted in the context of the study of battery electrodes. [9][10][11] The geometry adopted for these studies was however severely limiting the sensitivity, and imposing stringent limitations for the electrochemical conditions (especially in terms of mass-transport limitations), which have direct impact on the obtained results. [ 12 ] Here, we use an alternative approach based on the multiple-internal-refl ection geometry, which allows for benefi ting from an enhanced sensitivity and working in electrochemical conditions similar to those of standard batteries for studying thin-fi lm electrodes. As shown hereafter, such a capability provides useful information of direct relevance for both interfacial and bulk electrode processes.The present study has been devoted to silicon electrodes, studied in a half-cell confi guration against a lithium-metal electrode. Silicon represents an impressive gain in energy density for negative electrodes in Li-ion batteries. One strategy to overcome the poor capacity retention associated with the massive volume expansion of silicon during lithiation is the use of nanosized geometries, for instance, particles, [13][14][15][16] wires, [17][18][19] and tubes. [ 20,21 ] The use of a thin-fi lm geometry also prevents Multiple-internal-refl ection infrared spectroscopy allows for the study of thin-fi lm amorphous silicon electrodes in situ and in operando, in conditions typical of those used in Li-ion batteries. It brings an enhanced sensitivity, and the attenuated-total-refl ection geometry allows for the extraction of quantitative information. When electrodes are cycled in representative electrolytes, the simultaneously recorded infrared spectra give an insight into the solid/electrolyte interphase (SEI) composition. They also unravel the dynamic behavior of this SEI layer by quantitatively assessing its thickness, which increases during silicon lithiation and partially decreases during delithiation. Li-ion solvation ...

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Quantitative hydrogen measurements in PECVD and HWCVD a-Si:H using FTIR spectroscopy

Cited by 18 publications

References 14 publications

Structure and electronic states in a-Si:H thin films

Structure and electronic states in a-Si:H thin films

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Spectroscopic Insight into Li‐Ion Batteries during Operation: An Alternative Infrared Approach

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