Depositions of SrRuO3 thin films on oxide substrates with liquid-delivery spin MOCVD

Schwarzkopf, Jutta; Dirsyte, R.; Devi, Anjana; Schmidbauer, M.; Wagner, G.; Fornari, R.

doi:10.1016/j.tsf.2009.12.057

Cited by 8 publications

(6 citation statements)

References 32 publications

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“…A more detailed description of the deposition conditions are given in Ref. [16]. Four SrRuO 3 films which were grown under different deposition conditions, and result in the occurrence of the details are given in Table 1.…”

Section: Methodsmentioning

confidence: 99%

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Anooz

Schwarzkopf

Dirsyte

et al. 2011

Materials Science and Engineering: B

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Section: Methodsmentioning

confidence: 99%

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Anooz

Schwarzkopf

Dirsyte

et al. 2011

Materials Science and Engineering: B

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“…The ambient pressure during deposition was 26 mbar. The details of the deposition are reported elsewhere 16. The as‐deposited film was annealed at temperatures ranging from 300 to 1000 °C for 60 min in an oxygen atmosphere using a quartz tubular furnace.…”

Section: Methodsmentioning

confidence: 99%

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Anooz

Schwarzkopf

Dirsyte

et al. 2010

Physica Status Solidi (a)

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6392 3003We report on the annealing effects on strontium ruthenate thin films deposited on SrTiO 3 using liquid-delivery metalorganic chemical vapor deposition (MOCVD). The results of high resolution X-ray diffraction (HR-XRD), Raman spectroscopy, atomic force microscopy (AFM), and electrical resistivity, before and after a post-growth annealing process were analyzed and compared. XRD and Raman spectroscopy for the asdeposited film revealed that the film had c-axis orientation and contained RuO 2 as secondary phase. Single phase SrRuO 3 could be obtained by annealing the film at 700 8C. Annealing at higher temperatures up to 850 8C leads to ruthenium deficiency, which is revealed by an increase in the out-of-plane lattice parameter, while at even higher annealing temperatures a decrease in the outof-plane lattice parameter was detected might be due to diffusion of Ti from the substrate. The electrical resistivity increased with increasing annealing temperature up to 950 8C and showed typical metallic temperature dependence, while for the film annealed at 1000 8C a semiconductor-like behavior was observed.

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“…The same trend of ruthenium non-stoichiometry with out-of-plane lattice parameters was observed in numerous previous studies. 12,21,25 Temperature dependent measurements of the electric resistivity in the range of 2 ≤ T /K ≤ 300 were performed and the data are shown in Fig. 3.…”

confidence: 99%

Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

et al. 2016

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SrRuO3 thin-films were deposited with different pulse repetition rates, fdep, epitaxially on vicinal SrTiO3 substrates by means of pulsed laser deposition. The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature) consistently reveals that an increase in laser repetition rate results in an increase in ruthenium deficiency in the films. By the same token, it is shown that when using low repetition rates, approaching a nearly stoichiometric cation ratio in SrRuO3 becomes feasible. Based on these results, we propose a mechanism to explain the widely observed Ru deficiency of SrRuO3 thin-films. Our findings demand these theoretical considerations to be based on kinetic rather than widely employed thermodynamic arguments.

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Depositions of SrRuO3 thin films on oxide substrates with liquid-delivery spin MOCVD

Cited by 8 publications

References 32 publications

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

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Depositions of SrRuO3 thin films on oxide substrates with liquid-delivery spin MOCVD

Cited by 8 publications

References 32 publications

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD

Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

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Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD