Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Anooz, Saud Bin; Schwarzkopf, Jutta; Dirsyte, R.; Schmidbauer, M.; Irmscher, K.; Kwasniewski, Albert; Fornari, R.

doi:10.1016/j.mseb.2011.02.008

Cited by 6 publications

(4 citation statements)

References 42 publications

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“…This definition gives a value for T c which is close to the one that was determined using the intersection point. The Curie temperature T c in bulk samples is 160 K, whereas in our thin film specimen it is reduced by about 15 K. This shift is in agreement with XRD results and may be explained by the presence of lattice strain in the film 34,38 and/or the nonstoichiometry effect. 19 Resonant UPS experiments were performed in the synchrotron radiation laboratory HASYLAB, Hamburg (Germany).…”

Section: Methodssupporting

confidence: 90%

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Ab initioand photoemission study of correlation effects in SrRuO3thin films

et al. 2013

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We present the experimental and theoretical study of correlation effects in epitaxial SrRuO 3 thin films. Experimentally, we have performed resonant ultraviolet photoemission spectroscopy (UPS) and angle-resolved hard x-ray photoemission spectroscopy (HAXPES) measurements. For resonant UPS, the two methods, Fanoprofile fitting of constant initial state spectra and the energy distribution curves equidistant difference spectra, were used to extract Ru 4d partial spectral weight (PSW) in the valence band. We find Ru 4d PSW possessing a clearly pronounced coherent peak at the Fermi level together with angle-resolved HAXPES spectra demonstrating no difference in surface and bulk electronic structure. From comparison of experimental data with theoretical calculations done at density functional theory level, we conclude that SrRuO 3 is a weakly correlated material and electronic structure of it can be consistently described employing first-principles approaches.

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Section: Methodssupporting

confidence: 90%

“…Below Curie temperature (T c ), the experimental data in Fig. 3 have been fitted according to the following equation: 33,34 …”

Section: Methodsmentioning

confidence: 99%

Ab initioand photoemission study of correlation effects in SrRuO3thin films

et al. 2013

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“…The c-axis of SrRuO 3 is consequently lengthened and the XRD peak shifts to lower angles without loss of crystallinity (Fig. 1d) [15][16][17] . Moreover, Ru-deficient SrRuO 3 is known to exhibit a higher resistivity and lower Curie temperature than stoichiometric SrRuO 3 18,19 .…”

Section: Resultsmentioning

confidence: 99%

Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors

et al. 2023

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Capacitors based on ABO3-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration with dynamic random access memory (DRAM) devices. Among the thermodynamically stable perovskite oxides, titanates (ATiO3) exhibit high dielectric permittivity in metal–insulator–metal (MIM) configurations. However, their performance in mitigating the large leakage current caused by their narrow bandgap (3 eV) remain under scrutiny. Herein, substantially enhanced dielectric properties of an epitaxial SrRuO3/Ba0.5Sr0.5TiO3/SrRuO3 MIM capacitor with a thin dielectric layer (10 nm) are reported. The dielectric/electrode heterointerface was engineered to realize a capacitor with a low leakage current and high dielectric permittivity. A pit-free and stoichiometric SrRuO3 bottom electrode with an atomically smooth surface was exploited to suppress defect formation at the heterointerface. The critical roles of oxygen vacancies and substituted transition-metal atoms in determining the leakage current were assessed, and a strategy for reducing the leakage current via interface engineering was established. Consequently, a dielectric permittivity of 861 and a leakage current density of 5.15 × 10−6 A/cm2 at 1 V were obtained with the thinnest dielectric layer ever reported. Our work paves the way for the development of perovskite-oxide-based capacitors in next-generation DRAM memories.

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“…1d). [10][11][12] Moreover, Ru-de cient SrRuO 3 is known to exhibit a higher resistivity and lower Curie temperature than those of stoichiometric SrRuO 3 . 13,14 Therefore, an SrRuO 3 bottom electrode with a wellarranged and pit-free surface was obtained at a low PLD repetition frequency for operating as the bottom of the electrode-dielectric interface.…”

Section: Resultsmentioning

confidence: 99%

Interface Engineering for Substantial Performance Enhancement in Epitaxial All Perovskite Oxide Capacitor

Kim

Bang

Lee

et al. 2022

Preprint

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Capacitors based on ABO3-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration for dynamic random access memory (DRAM) devices. Among thermodynamically stable perovskite oxides, titanates (ATiO3) exhibit high dielectric permittivity in metal–insulator–metal (MIM) configurations. However, their ultimate properties remain under scrutiny for mitigating the large leakage current caused by their narrow bandgap (3 eV). Herein, substantially enhanced dielectric properties of an epitaxial SrRuO3/Ba0.5Sr0.5TiO3/SrRuO3 MIM capacitor with a thin dielectric layer (10 nm) are reported. The dielectric/electrode heterointerface was engineered to realize a capacitor with low leakage current and high dielectric permittivity. A pit-free and stoichiometric SrRuO3 bottom electrode with atomically smooth surface was exploited for suppressing defect formation at the heterointerface. The critical roles of oxygen vacancies and substituted transition-metal atoms in determining the leakage current were accessed and a strategy for reducing the leakage current via interface engineering was established. Consequently, a dielectric permittivity of 861 and leakage current density of 5.15 × 10− 6 A/cm2 at 1 V were obtained with the thinnest dielectric layer ever reported. Our work paves the way for the development of perovskite-oxide-based capacitors in next-generation DRAM memories.

show abstract

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (001) SrTiO3 substrates: The role of built-in strain and extra phases

Cited by 6 publications

References 42 publications

Ab initioand photoemission study of correlation effects in SrRuO3thin films

Ab initioand photoemission study of correlation effects in SrRuO3thin films

Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors

Interface Engineering for Substantial Performance Enhancement in Epitaxial All Perovskite Oxide Capacitor

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