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6392 3003We report on the annealing effects on strontium ruthenate thin films deposited on SrTiO 3 using liquid-delivery metalorganic chemical vapor deposition (MOCVD). The results of high resolution X-ray diffraction (HR-XRD), Raman spectroscopy, atomic force microscopy (AFM), and electrical resistivity, before and after a post-growth annealing process were analyzed and compared. XRD and Raman spectroscopy for the asdeposited film revealed that the film had c-axis orientation and contained RuO 2 as secondary phase. Single phase SrRuO 3 could be obtained by annealing the film at 700 8C. Annealing at higher temperatures up to 850 8C leads to ruthenium deficiency, which is revealed by an increase in the out-of-plane lattice parameter, while at even higher annealing temperatures a decrease in the outof-plane lattice parameter was detected might be due to diffusion of Ti from the substrate. The electrical resistivity increased with increasing annealing temperature up to 950 8C and showed typical metallic temperature dependence, while for the film annealed at 1000 8C a semiconductor-like behavior was observed.

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