Deposition of transparent and conducting indium-tin-oxide films by the r.f.-superimposed DC sputtering technology

Bender, Marcus; Trube, J.; Stollenwerk, Jochen

doi:10.1016/s0040-6090(99)00558-1

Cited by 73 publications

(25 citation statements)

References 20 publications

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“…1(b)). The RF sputtering process also has a three fold lower deposition rate ($20 nm/min) compared to DC sputtering ($60 nm/min) for equivalent power densities (similar to what is reported in [11,12] for sputtering at high substrate temperatures).…”

Section: Resultssupporting

confidence: 76%

See 1 more Smart Citation

Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Kurdesau

Хрипунов

Cunha

et al. 2006

Journal of Non-Crystalline Solids

151

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Section: Resultssupporting

confidence: 76%

“…The influence of the plasma discharge mode for the high temperature sputtering process has already been studied in several works [11,12]. Depending on the plasma mode (DC or RF), an essential difference of optimum sputtering conditions (discharge power density, pressure, oxygen concentration, etc.)…”

Section: Introductionmentioning

confidence: 99%

Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Kurdesau

Хрипунов

Cunha

et al. 2006

Journal of Non-Crystalline Solids

151

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“…While the carrier concentration in TSO is limited by the solubility of dopants, the mobility l is limited by scattering of the charge carriers in the lattice. Several electron scattering mechanisms could be operative in TSO, such as scattering by ionized impurities, neutral centers (point defects and their complexes), thermal vibrations of the lattice (acoustical and optical phonons), structural defects (vacancies, dislocations, stacking faults), and grain boundaries, depending on the carrier concentration and crystal quality of the material [204][205][206][207][208][209][210][211][212][213][214].…”

Section: Electro-optical Propertiesmentioning

confidence: 99%

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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TiO 2 -based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO 2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a widebandgap semiconductor, modified TiO 2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO 2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO 2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO 2 as n-and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO 2 -TSOs. The synthesis of p-TiO 2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO 2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO 2 to obtain n-and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO 2 for conductivity reversal. Applications of both nand p-type TiO 2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dyesensitized solar cells, electrochromic displays, and other energy-related applications.

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“…9,10 In addition, the poor thermal stability of optical-grade plastic films -such as polyethylene naphthalate-precludes the use of c-ITO that requires a high-temperature processing step above 250°C that most optical plastic films cannot stand. [11][12][13] As such, it is not a simple task to prepare TCEs with both a high conductivity and a high mechanical flexibility using metal oxides.…”

Section: Introductionmentioning

confidence: 99%

Hybrid crystalline-ITO/metal nanowire mesh transparent electrodes and their application for highly flexible perovskite solar cells

Jeong

Jin

et al. 2016

NPG Asia Mater

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Here, we propose crystalline indium tin oxide/metal nanowire composite electrode (c-ITO/metal NW-GFRHybrimer) films as a robust platform for flexible optoelectronic devices. A very thin c-ITO overcoating layer was introduced to the surface-embedded metal nanowire (NW) network. The c-ITO/metal NW-GFRHybrimer films exhibited outstanding mechanical flexibility, excellent optoelectrical properties and thermal/chemical robustness. Highly flexible and efficient metal halide perovskite solar cells were fabricated on the films. The devices on the c-ITO/AgNW-and c-ITO/CuNW-GFRHybrimer films exhibited power conversion efficiency values of 14.15% and 12.95%, respectively. A synergetic combination of the thin c-ITO layer and the metal NW mesh transparent conducting electrode will be beneficial for use in flexible optoelectronic applications.

show abstract

Deposition of transparent and conducting indium-tin-oxide films by the r.f.-superimposed DC sputtering technology

Cited by 73 publications

References 20 publications

Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

Hybrid crystalline-ITO/metal nanowire mesh transparent electrodes and their application for highly flexible perovskite solar cells

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