Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Kurdesau, F.; Хрипунов, Г.С.; Cunha, A. F. da; Kaelin, M.; Tiwari, Ayodhya N.

doi:10.1016/j.jnoncrysol.2005.11.088

Cited by 158 publications

(92 citation statements)

References 16 publications

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“…The presence of SnO 2 would result in doping of the lattice because the dopant would add electrons to the conduction band [21]. Furthermore, many studies have reported that the resistivity of ITO thin films is strongly dependent on the oxidation state during film deposition [22][23][24][25]. As pointed out above, the charge carriers of the ITO thin films are either contributed by Sn +4 ion or oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85 × 10 −4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10-50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

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Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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“…For example, the Cu 2 O-doped Zn 1-x Al x O films mentioned previously require a 400 ºC anneal in N 2 and H 2 gas to achieve high conductivity. [28] This again contrasts with n-TCMs, for which room temperature syntheses have been developed, [6,29,30] enabling application of these materials in device stacks with limited thermal budgets such as thin film photovoltaics, organic photovoltaics, and flexible electronics. [10,31] For p-TCMs, there are only a few reports of room temperature deposition including ZnO·Rh 2 O 3 and Zn-Co-O with conductivities of 1.9 and 21 S cm -1 , respectively; [26,32] in these studies p-type conductivity was reported but the band gaps are in the visible range, leading to reduced optical transmission.…”

Section: Introductionmentioning

confidence: 99%

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Woods‐Robinson

Cooper

et al. 2016

Adv Elect Materials

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All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. In addition, many relatively high- A decrease in lattice parameter with Cu content suggests the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous Cu y S, which dominates at higher Cu concentrations. The combination of high hole conductivity and optical transparency for the peak conductivity Cu x Zn 1-x S films is among the best reported to date for a room temperature deposited p-type TCM.

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“…discharge power density, pressure, oxygen concentration, etc.) was observed, as well as a difference in the crystalline structure and morphology of the formed layers [53]. In general, sputtering allows for a relatively wide range of film tunablility due to the various process conditions involved in the process.…”

Section: Sputteringmentioning

confidence: 99%

“…Within sputtering, a variety of techniques have been adopted, including conventional direct current (DC), radio frequency (RF), and magnetron reactive sputtering of a metal alloy target in the presence of oxygen, as well as RF and ion beam sputtering of a pressed oxide powder target [41]. Among these options, DC and RF magnetron sputtering are the most attractive techniques for industrial development because both allow for high deposition rates, good reproducibility, and the possibility of using commercially available large area sputtering systems [53]. Typically, magnetron sputtering processes are performed at high substrate temperatures (≥ 200 ∘ C), as these allow the best results in terms of layer transparency and conductivity to be obtained.…”

Section: Sputteringmentioning

confidence: 99%

Indium-Tin-Oxide for High-performance Electro-optic Modulation

et al. 2015

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Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.

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Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature

Cited by 158 publications

References 16 publications

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Indium-Tin-Oxide for High-performance Electro-optic Modulation

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