Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

Morrison, S.; Das, Ujjwal K.; Madan, A.

doi:10.1016/s0927-0248(02)00280-5

Cited by 14 publications

(3 citation statements)

References 4 publications

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“…It has been reported that deposition rates for a state‐of‐the‐art i‐a‐Si:H absorber are in the range 0.2–0.5 nm/sec . The higher deposition rate of i‐a‐Si:H induces lower η ini and the higher light‐induced degradation of a‐Si:H–based solar cells, which results in lower η sta . From the aforementioned indoor light‐soaking results, the a‐Si:H single‐junction PV modules deposited with the high deposition rate of 0.35 nm/sec have lower stabilized P max because of the higher light‐induced degradation ratio compared with their counterparts deposited with the low deposition rate of 0.20 nm/sec.…”

Section: Resultsmentioning

confidence: 98%

Inferior outdoor‐exposed performances of encapsulated a‐Si:H photovoltaic modules deposited with a high speed

Myong¹,

Park²,

Kwon³

2013

Energy Science & Engineering

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We investigate the stabilized performance of encapsulated hydrogenated amorphous silicon photovoltaic modules depending on the deposition speed. The module products are degraded differently depending on the light-soaking environment. The modules deposited at a high speed demonstrate significant degradation in an outdoor exposure test, despite moderate degradation during indoor light soaking. However, the modules deposited at a low speed show a relatively more stable performance against the outdoor exposure test. Notably, some modules show the trend that a higher initial performance stimulates a higher light-induced degradation, leading to a lower performance in the outdoor environment.

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Section: Resultsmentioning

confidence: 98%

Inferior outdoor‐exposed performances of encapsulated a‐Si:H photovoltaic modules deposited with a high speed

Myong¹,

Park²,

Kwon³

2013

Energy Science & Engineering

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“…Several researchers have previously compared the properties of Si films prepared by HWCVD and PECVD. [23][24][25] However, there are few reports about the crystalline evolution of the HWCVD Si films. In order to give a more comprehensive view, the growth mechanism of HWCVD poly-Si films was probed and interpreted by both the Raman and TEM examinations.…”

Section: Resultsmentioning

confidence: 99%

Incubation Effects upon Polycrystalline Silicon on Glass Deposited by Hot‐Wire CVD

Lien

Mao

et al. 2007

Chemical Vapor Deposition

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A growth mechanism diagnosis for high-rate, polycrystalline silicon deposition using hot-wire CVD is explored in this article. The effects of various deposition parameters on the Si film growth are investigated by Raman spectroscopy and transmission electron microscopy (TEM) measurements, with special attention paid to the crystalline and amorphous phases. It is found that the H 2 /SiH 4 ratio and substrate temperature (T s ) are the essential process parameters in determining the crystalline phase and the incubation thickness of the as-deposited Si film. Under low hydrogen dilution conditions, an amorphous incubation layer was formed and degraded the crystalline fraction of the Si film. The incubation thickness prior to the nucleation decreases with the increase of the hydrogen dilution ratio. Under higher H 2 /SiH 4 ratios (≥50), the amorphous phase deposited on the substrate could be etched selectively by the atomic hydrogen. As a consequence, nucleation of small crystallite occurs directly on the substrate. At low substrate temperatures, the deposition process shows the disadvantages of small grain size and low crystallinity. The poly-Si film can be deposited from the seed layer under high T s conditions (>350°C) where the Si appears singly crystallized at the initial stage and then grows epitaxially.

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“…In this work, pulse-PECVD [1][2][3][4] was used to deposited a-SiC x :H p-i-n solar cells. By changing t on , the dissociate rates of SiH 4 and CH 4 were changed to prepared a-SiC x :H films with various amounts of carbon contents.…”

Section: Introductionmentioning

confidence: 99%

Pulsed Plasma Deposited a-SiC<sub>x</sub>:H p-i-n Solar Cells

Jiang¹,

Huang²,

Kuo³

2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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Hydrogenated amorphous silicon carbide (a-SiC x :H) p-in solar cells were fabricated by pulsed plasma. The carbon content in a-SiC x :H films were effectively controlled by fixed the plasma turn-off time (t off) and altered the plasma turn-on time (t on). Increasing t on dissociates more carbon contents in the a-SiC x :H films, resulting in the increasing of the optical bandgap (E g) but reducing the absorption coefficient () and the refractive index (n). Correspondently, for a-SiC x :H solar cells with i-layer deposited by increasing t on , the open-circuit voltage (V oc) is increased, but the short-circuit current density (J sc) and fill factor (FF) are reduced, and the energy transfer efficiency is effectively reduced. Combining a buffer layer at p/i interface deposited by high t on and the bulk of i-layer deposited by low t on can increase the V oc and maintain the high value of J sc .

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Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

Cited by 14 publications

References 4 publications

Inferior outdoor‐exposed performances of encapsulated a‐Si:H photovoltaic modules deposited with a high speed

Inferior outdoor‐exposed performances of encapsulated a‐Si:H photovoltaic modules deposited with a high speed

Incubation Effects upon Polycrystalline Silicon on Glass Deposited by Hot‐Wire CVD

Pulsed Plasma Deposited a-SiC<sub>x</sub>:H p-i-n Solar Cells

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