We develop a rapidly stabilized pin-type thin film solar cell with a low degradation by combining a p-type hydrogenated amorphous silicon-carbide (p-a-SiC:H) double layer structure and an alternately hydrogen-diluted protocrystalline silicon (pc-Si:H) multilayer absorber. The p-a-SiC:H double layer structure increases overall initial parameters by reducing recombination at the p/i interface. After 12 h standard light irradiation, we achieve a stabilized efficiency of 9.0% without using any back reflector. Nano-sized silicon grains embedded in regularly arranged highly hydrogen-diluted sublayers of the pc-Si:H multilayer suppress the photocreation of dangling bonds in a amorphous silicon matrix acting as radiative recombination centres of photoexcited carriers.
We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. However, the source of the superior light-induced stability of the pc-Si:H multilayer absorbers compared to conventional amorphous silicon (a-Si:H) absorbers remains unclear. Photoluminescence (PL) and Fourier transform infrared (FTIR) spectroscopy measured at room temperature produce strong evidence that nano-sized silicon grains embedded in regularly arranged highly H 2 -diluted sublayers suppress the photocreation of dangling bonds. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous siliconcarbon alloy (p-a-Si 1-x C x :H) structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage, and the wide overlap of dark current -voltage (J D -V) and short-circuit current -open-circuit voltage (J sc -V oc ) characteristics prove that the double p-a-Si 1-x C x :H layer structure successfully reduces recombination at the p/i interface. Thus, we achieved a highly stabilized efficiency of 9.0 % without any back reflector.
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