Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

Wu, Peter; Yang, G.‐R.; You, Lü; Mathur, D.; Cocoziello, A.; Bakru, H.; Lang, Chi-I; Moore, James A.; Lu, Toh‐Ming

doi:10.1007/s11664-997-0280-8

Cited by 18 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main reasons are the difficulty encountered in film synthesis (process, cost) and the only recent availability of commercial films (since 2004). The work reported in the literature deals mainly with film synthesis and the resulting chemical structure (CF 2 formation, crystallization kinetics, and oxygen impurity content), 8,9,[17][18][19] and sometimes with thermal properties. 11,12 In fact, studies regarding the electrical properties of PA-F are almost nonexistent.…”

Section: Introductionmentioning

confidence: 99%

Electrical Conductivity of Parylene F at High Temperature

Diaham

Bechara

Locatelli

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

The electrical conductivity of both as-deposited and annealed poly(a,a,a¢,a¢-tetrafluoro-p-xylylene) (PA-F) films has been investigated up to 400°C. The static conductivity (r DC ) values of PA-F measured between 200°C and 340°C appear to be $2.5 orders of magnitude lower for annealed films than for as-deposited ones. This change is attributed to a strong increase in the crystallinity of the material occurring above 340°C. After annealing at 400°C in N 2 , the r DC value measured at 300°C, for instance, decreased from 3.8 9 10 À12 X À1 cm À1 to 7.5 9 10 À15 X À1 cm À1 . Physical interpretations of such an improvement are offered.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical Conductivity of Parylene F at High Temperature

Diaham

Bechara

Locatelli

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…However, to our knowledge, there has been no commercially available precursor to AF4 ( 1 ). By taking advantage of the use of readily available trifluoromethylated compounds, selective defluorination of 1,4-bis(trifluoromethyl)benzene ( 4 ) would provide a highly efficient access to cyclophane 1 . Herein, we report a conceptually new route for the synthesis of AF4 involving successive C−F bond cleavage processes of commercially available 4 as a starting material (eq 1).…”

Section: Introductionmentioning

confidence: 99%

A New C−F Bond-Cleavage Route for the Synthesis of Octafluoro[2.2]paracyclophane

et al. 2001

View full text Add to dashboard Cite

“…5,6,8 Specifically, Parylene films have dielectric constants of 2.35-2.95 at 1 MHz and are stable at temperatures up to 400-500°C. 6 In particular, Parylene-F type films ( -CF 2 -C 6 H 4 -CF 2 -) n have a reported decomposition temperature of 530°C and a low frequency dielectric constant that ranges between 2.35 to 2.75, which depends on the deposition conditions and post deposition treatments.…”

mentioning

confidence: 99%

“…6 In particular, Parylene-F type films ( -CF 2 -C 6 H 4 -CF 2 -) n have a reported decomposition temperature of 530°C and a low frequency dielectric constant that ranges between 2.35 to 2.75, which depends on the deposition conditions and post deposition treatments. [4][5][6][7][8] At present, there are two methods for depositing Parylene-F films. In Gorham's method, the solid dimer ( -CF 2 -C 6 H 4 -CF 2 -) 2 is sublimed and then cracked at 720-730°C to produce the monomer which is polymerized on the substrate to obtain Parylene-F films.…”

mentioning

confidence: 99%

Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Hanyaloglu

Aydınlı

Oye

et al. 1999

Applied Physics Letters

View full text Add to dashboard Cite

Cataloged from PDF version of article.We report on the dielectric properties and thermal stability of thin polymer films that art: suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-Iike films, (-CF2-C6H4-CF2-)(n), were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300 degrees C are stable above 400 degrees C and further optimization could push this limit to as high as 500 degrees C. (C) 1999 American Institute of Physics

show abstract

Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

Cited by 18 publications

References 10 publications

Electrical Conductivity of Parylene F at High Temperature

Electrical Conductivity of Parylene F at High Temperature

A New C−F Bond-Cleavage Route for the Synthesis of Octafluoro[2.2]paracyclophane

Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Contact Info

Product

Resources

About