Deposition of diamond films on sapphire: studies of interfacial properties and patterning techniques

May, Paul; Rego, C.A.; Trevor, CG; Williamson, EC; Ashfold, Michael N. R.; Rosser, KN; Everitt, Nicola M.

doi:10.1016/0925-9635(94)90153-8

Cited by 11 publications

(8 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has also been shown that GaN grown on sapphire is unsuitable for growth of thick diamond layers due to the thermal mismatch between diamond and sapphire. 20 However, diamond can be grown on AlN. 21 This offers the possibility for a much improved GaN-on-diamond material structure.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is not possible to grow a thick diamond layer (>10 μm) on GaN due to the absence of any carbide bond between GaN and diamond layers and large differences in their thermal expansion coefficients. It has also been shown that GaN grown on sapphire is unsuitable for growth of thick diamond layers due to the thermal mismatch between diamond and sapphire . However, diamond can be grown on AlN .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Mandal

Yuan

Massabuau

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Mandal

Yuan

Massabuau

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…While the hydrocarbon species that are not adsorbed may leave the substrate surface by desorption into the gas phase again, the adsorbed species decompose into carbon atoms before diffusing along the substrate surface or into substrate, forming an intermediate layer. In the case of diamond deposition on sapphire substrate, there is no formation of an intermediate layer [3,8,9]. Due to the absence of an intermediate layer, no incubation period is observed and diamond nucleation occurs directly on the sapphire surface as a result of the surface diffusion of the adsorbed carbon atoms.…”

Section: Resultsmentioning

confidence: 93%

Effect of diffusion length on the nucleation of chemical vapour deposition diamond

Saw¹

2007

Surface Science

View full text Add to dashboard Cite

“…No interfacial bonding layer between the diamond thin film and the substrate is formed during diamond growth on a single-crystal Al 2 O 3 surface, which leads to poor adhesion. 11 The nucleation density on the mirror-polished Al 2 O 3 substrate is also very poor. The generation of large residual compressive stress in the diamond film due to a huge thermal mismatch between the diamond and Al 2 O 3 also leads to the delamination of the film.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Diamond Deposition on Al₂O₃, Diamond-like Carbon, and Q-Carbon

Haque

Gupta

Narayan

2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

We have conducted a comparative study on the deposition of diamond thin film on uncoated Al 2 O 3 , diamond-like carbon (DLC, grown by pulsed laser deposition) film-coated Al 2 O 3 , and Q-carbon (fabricated by nanosecond pulsed laser annealing)-coated Al 2 O 3 substrates by hot filament chemical vapor deposition (HFCVD). Scanning electron microscopy shows that the continuous large-area diamond thin film can be grown on the Q-carbon/Al 2 O 3 substrate, whereas the deposition of diamond on DLC/Al 2 O 3 or uncoated Al 2 O 3 substrates gives clusterlike/patches of discontinuous diamond thin film formation. Raman spectroscopy of the diamond on Q-carbon/Al 2 O 3 shows a considerably small residual stress (1.7 GPa) compared to the diamond on DLC/Al 2 O 3 (3.1 GPa) or diamond on the uncoated Al 2 O 3 (3.9 GPa) substrate. The nondiamond content in the diamond crystals on Q-carbon-coated Al 2 O 3 is found to be only 0.12%, which is about 2.5 and 3.5 times less than that of diamond on DLC-coated Al 2 O 3 and uncoated Al 2 O 3 , respectively. Consistent with the Raman analysis, the X-ray diffraction analysis shows the crystalline growth of the HFCVD diamond on Q-carbon/Al 2 O 3 with relatively small in-plane stress compared to the diamond film on the other two systems. We propose that the high density of diamond tetrahedron in the Q-carbon structure provides a good platform for diamond growth with a very high nucleation density over 10 9 cm −2 and can act as a seed layer for diamond growth without cracking or delamination over the surface of the substrate. The optically transparent high-quality diamond film on Q-carbon-coated Al 2 O 3 showed better adhesion compared to that on DLC-coated Al 2 O 3 and uncoated Al 2 O 3 , as measured by a simple scotch tape test. These results open a path toward the fabrication of large-area high-quality diamond films on an optically transparent substrate for commercial applications.

show abstract

Deposition of diamond films on sapphire: studies of interfacial properties and patterning techniques

Cited by 11 publications

References 13 publications

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Effect of diffusion length on the nucleation of chemical vapour deposition diamond

Characteristics of Diamond Deposition on Al₂O₃, Diamond-like Carbon, and Q-Carbon

Contact Info

Product

Resources

About

Deposition of diamond films on sapphire: studies of interfacial properties and patterning techniques

Cited by 11 publications

References 13 publications

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Effect of diffusion length on the nucleation of chemical vapour deposition diamond

Characteristics of Diamond Deposition on Al2O3, Diamond-like Carbon, and Q-Carbon

Contact Info

Product

Resources

About

Characteristics of Diamond Deposition on Al₂O₃, Diamond-like Carbon, and Q-Carbon