Deposition of a-SiC:H thin film from organosilicon material by remote plasma CVD method

Xu, Ying-Yu; Muramatsu, T.; Taniyama, Masakazu; Aoki, Toru; Hatanaka, Y.

doi:10.1016/s0040-6090(00)00761-6

Cited by 13 publications

(8 citation statements)

References 6 publications

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“…Although the presence of a (SiO) n  backbone is on the whole unquestionable, the occurrence of a few SiCH 2 Si bridges or SiCH 2 CH x  is possible. Indeed, recent papers on thin film deposition from hexamethyldisilane indicate that the IR spectrum of deposits exhibits a broad band at 1 020 cm −1 which has been ascribed to the Si(CH 2 ) n Si bridge (wagging mode 1 ≤ n ≤ 2) 12–14. Obviously, this deposit does not contain SiO bonds.…”

Section: Discussionmentioning

confidence: 93%

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

Raynaud¹,

Despax²,

Ségui³

et al. 2004

Plasma Processes & Polymers

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Summary: In this paper, the gas phase composition of hexamethyldisiloxane (HMDSO) microwave plasma at 4 × 10−3 mbar and of the corresponding films were studied by FTIR spectroscopy under different power conditions. At low powers, species with a chemical structure very similar to that of HMDSO were observed in the gas phase, whereas the film essentially contained short [(CH3)2SiO]n‐like chains with a low branching rate and the end group Si(CH3)3. At higher powers, the chemical entities present in the gas phase contained several (SiO)x bonds, whereas the branching rate in the film increased with the amount of SiH, SiC and SiO bonds. The interpretation of these observations led to a proposal involving a chemical mechanism. In this mechanism, the increasing decomposition of HMDSO into by‐products, which themselves increasingly decompose as the power is raised, plays a determining role.

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Section: Discussionmentioning

confidence: 93%

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

Raynaud¹,

Despax²,

Ségui³

et al. 2004

Plasma Processes & Polymers

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“…Sources frequently employed in PECVD process for the deposition of SiC films include silane/methane, 14 tetramethylsilane, 15 and hexamethyldisilane. 16 As mentioned in Ref. 16, pure silane is a good source for silicon, but it is an extremely hazardous material.…”

Section: Introductionmentioning

confidence: 99%

“…16 As mentioned in Ref. 16, pure silane is a good source for silicon, but it is an extremely hazardous material. Therefore, organosilicon sources containing Si and C as constituents, as in case of tetramethylsilane 15 and hexamethyldisilane 16 have been used for the deposition of SiC films.…”

Section: Introductionmentioning

confidence: 99%

Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

Rajagopalan

Wang

Lahlouh

et al. 2003

Journal of Applied Physics

145

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Nanocrystalline silicon carbide ͑SiC͒ thin films were deposited by plasma enhanced chemical vapor deposition technique at different deposition temperatures (T d) ranging from 80 to 575°C and different gas flow ratios ͑GFRs͒. While diethylsilane was used as the source for the preparation of SiC films, hydrogen, argon and helium were used as dilution gases in different concentrations. The effects of T d , GFR and dilution gases on the structural and optical properties of these films were investigated using high resolution transmission electron microscope ͑HRTEM͒, micro-Raman, Fourier transform infrared ͑FTIR͒ and ultraviolet-visible optical absorption techniques. Detailed analysis of the FTIR spectra indicates the onset of formation of SiC nanocrystals embedded in the amorphous matrix of the films deposited at a temperature of 300°C. The degree of crystallization increases with increasing T d and the crystalline fraction (f c) is 65%Ϯ2.2% at 575°C. The f c is the highest for the films deposited with hydrogen dilution in comparison with the films deposited with argon and helium at the same T d. The Raman spectra also confirm the occurrence of crystallization in these films. The HRTEM measurements confirm the existence of nanocrystallites in the amorphous matrix with a wide variation in the crystallite size from 2 to 10 nm. These results are in reasonable agreement with the FTIR and the micro-Raman analysis. The variation of refractive index ͑n͒ with T d is found to be quite consistent with the structural evolution of these films. The films deposited with high dilution of H 2 have large band gap (E g) and these values vary from 2.6 to 4.47 eV as T d is increased from 80 to 575°C. The size dependent shift in the E g value has also been investigated using effective mass approximation. Thus, the observed large band gap is attributed to the presence of nanocrystallites in the films.

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“…Despite the lack of direct spectroscopic analysis of the Si/SiO 2 -polyphenylene interface, it is likely the covalent grafting relies on Si-C and/or Si-O-C bonds, while the bonds involved in the multilayer formation are either C-N or C-C bonds [36,37]. Our study indicates that the overall energy of the interfacial bonds (mainly Si-C and/or Si-O-C bonds at the Si/SiO 2 -polyphenylene interface) is stronger than the energy responsible for the cohesion of the multilayer structure.…”

Section: Resultsmentioning

confidence: 99%

The in situ characterization and structuring of electrografted polyphenylene films on silicon surfaces. An AFM and XPS study

Ghorbal¹,

Grisotto²,

Laudé³

et al. 2008

Journal of Colloid and Interface Science

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Deposition of a-SiC:H thin film from organosilicon material by remote plasma CVD method

Cited by 13 publications

References 6 publications

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

The in situ characterization and structuring of electrografted polyphenylene films on silicon surfaces. An AFM and XPS study

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