The in situ characterization and structuring of electrografted polyphenylene films on silicon surfaces. An AFM and XPS study

Ghorbal, Achraf; Grisotto, Federico; Laudé, Marion; Charlier, Julienne

doi:10.1016/j.jcis.2008.09.033

Cited by 16 publications

(22 citation statements)

References 37 publications

(40 reference statements)

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“…Similarly, the possibility of charge transfer by tunneling through thin dielectrics [187][188][189][190][191][192] could allow the use of electrochemical techniques for derivatizing the surface of the adlayer, 193,194 without direct modification of the TMD material. Representative electrochemical techniques that may be useful include electrogelation, 195,196 electrografting 197 (for example aryl diazonium salts, 198 ), localized click-reactions, 199,200 and electrodeposition.…”

Section: Functional Adlayersmentioning

confidence: 99%

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015

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Recent explosion of interest in two-dimensional (2D) materials research has led to extensive exploration of physical and chemical phenomena unique to this new class of materials and their technological potential. Atomically thin layers of group 6 transition metal dichalcogenides (TMDs) such as MoS2 and WSe2 are remarkably stable semiconductors that allow highly efficient electrostatic control due to their 2D nature. Field effect transistors (FETs) based on 2D TMDs are basic building blocks for novel electronic and chemical sensing applications. Here, we review the state-of-the-art of TMD-based FETs and summarize the current understanding of interface and surface effects that play a major role in these systems. We discuss how controlled doping is key to tailoring the electrical response of these materials and realizing high performance devices. The first part of this review focuses on some fundamental features of gate-modulated charge transport in 2D TMDs. We critically evaluate the role of surfaces and interfaces based on the data reported in the literature and explain the observed discrepancies between the experimental and theoretical values of carrier mobility. The second part introduces various non-covalent strategies for achieving desired doping in these systems. Gas sensors based on charge transfer doping and electrostatic stabilization are introduced to highlight progress in this direction. We conclude the review with an outlook on the realization of tailored TMD-based field-effect devices through surface and interface chemistry.

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Section: Functional Adlayersmentioning

confidence: 99%

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015

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“…High concentrations (>1 mM), and long deposition times at excessive negative potentials are favorable conditions for multilayer formation [8- 11]. The limiting film thickness is typically less than 10 nm although thicker films may be obtained with some aryl groups [9,[12][13][14]. Electroless grafting from diazonium salts was also demonstrated, mainly on carbonaceous surfaces [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Selectivity of organic grafting as a function of the nature of semiconducting substrates

Charlier¹,

Clolus²,

Bureau³

2009

Journal of Electroanalytical Chemistry

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“…For monolayers on smooth surfaces i. e. sub nm roughness, atomic force microscopy (AFM) or scanning tunneling microscopy (STM) can identify packing variations and defect sites however, STM in particular is generally considered unsuitable for rough surfaces (nm‐μm roughness) due to scan range limitations. More importantly, to identify whether a surface feature observed in an image is an electroactive pinhole and not simply an undulation (characteristic of rough surfaces), a probe which provides an electrochemical response is necessary …”

Section: Introductionmentioning

confidence: 99%

“…More importantly, to identify whether a surface feature observed in an image is an electroactive pinhole and not simply an undulation (characteristic of rough surfaces), a probe which provides an electrochemical response is necessary. [4][5][6] Scanning electrochemical microscopy (SECM) bridges nm and micron resolution, and can directly probe electrochemical activity. [7,8] In the context of surface modification, SECM has been used to quantify heterogeneous rate constants at surface monolayers, [9,10] diffusion through porous films.…”

Section: Introductionmentioning

confidence: 99%

Identifying Nanoscale Pinhole Defects in Nitroaryl Layers with Scanning Electrochemical Cell Microscopy

Payne

Mauzeroll

2019

ChemElectroChem

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We are reporting the application of scanning electrochemical cell microscopy to probe and identify nanometric defects in a multilayered aryl film formed by aryldiazonium reduction. We have determined by numerical simulation that, due to pipette geometry restrictions, the best sensitivity towards pinhole size can be obtained when measuring small pinholes (� 10 nm) with moderately large pipette sizes (ca. 500 nm).

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The in situ characterization and structuring of electrografted polyphenylene films on silicon surfaces. An AFM and XPS study

Cited by 16 publications

References 37 publications

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Selectivity of organic grafting as a function of the nature of semiconducting substrates

Identifying Nanoscale Pinhole Defects in Nitroaryl Layers with Scanning Electrochemical Cell Microscopy

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