Deposition and properties of Mo–N films

Lin, Kwang‐Lung; Ho, Yu Jin

doi:10.1116/1.579606

Cited by 10 publications

(2 citation statements)

References 17 publications

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“…Metal nitride thin films, especially transition metal nitride thin films, are widely used as coating materials because of their characteristics such as high rigidity and excellent corrosion resistance. [1][2][3][4][5][6][7][8] They are also widely used as diffusion barrier materials for large-scale integration (LSI) metallization. In particular, metal nitride films are effective in suppressing the reaction at the interface between the Al or Cu and the diffusion barrier and/or the diffusion barrier and the Si or SiO 2 substrate.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization

Takeyama

Sato

2022

Jpn. J. Appl. Phys.

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To realize a low-temperature process for large-scale integration (LSI) and three-dimensional LSI, we proposed a new film formation method that combines sputtering and radical treatment in a low-temperature process without heating the substrate and examined its usefulness. The film formed by the proposed method had almost the same good film quality as that formed by the conventional reactive sputtering method at a substrate temperature of 350–400 °C; moreover, the barrier properties were comparable. This method has many merits, such as the ability to form a film with new properties that cannot be obtained with existing techniques. This method has applications in semiconductor technology as well as in many electronic device fields.

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Section: Introductionmentioning

confidence: 99%

Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization

Takeyama

Sato

2022

Jpn. J. Appl. Phys.

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“…During the past two decades, several works [7][8][9][10][11] have been reported regarding molybdenum nitride as diffusion barriers. In magnetron sputtering, a magnetic field is applied to avoid the loss of electrons in the plasma, by placing a magnet (magnetron) behind the target.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron

Chermime¹,

Abboudi²,

Djebaili³

et al. 2017

Metallofiz. Noveishie Tekhnol.

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The aim of this work is the characterization of ternary molybdenum-vanadium nitride (Mo-V-N) coatings deposited on silicon and XC100 steel substrates by the reactive radiofrequency dual magnetron sputtering with different contents of the Mo and V targets and nitrogen as reactive gas. The metal-target bias voltages are varied from 300 to 900 V. The hardness, surface morphology, microstructure and composition are studied by nanoindentation, scanning electron microscopy, atomic-force microscopy, and x-ray diffractometry. The Mo-V-N films manifest pyramidal surface morphology, high roughness (of 13.5 nm), but low mechanical properties. Hardness and Young's modulus are found in the ranges of 10-18 GPa and 100-335 GPa, respectively. The residual stresses of coatings are compressive and varied between 0.8 GPa and 2.5 GPa (calculated with the Stoney formula).Keywords: coatings, microstructure, residual stresses, roughness, hardness.Метою даної роботи є характеризація покриттів із трикомпонентного мо-лібден-ванадійового нітриду (Mo-V-N), що наносилися на кремнійові та сталеві (XC100) поверхні шляхом реактивного радіочастотного магнет-ронного двокатодного розпорошення цілей із різним вмістом Мо та V із використанням азоту в якості реакційноздатного газу. Відхили напруги зміщення металевої цілі варіювалися від 300 до 900 В. Твердість, морфо-логію поверхні, мікроструктуру та склад було досліджено за допомогою

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Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

Lin

Chu

Mahalingam

et al. 2003

Journal of Elec Materi

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The thermal annealing behavior of Cu films containing insoluble 2.0 at.% Mo magnetron co-sputtered on Si substrates is discussed in the present study. The Cu-Mo films were vacuum annealed at temperatures ranging from 200°C to 800°C. X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations have shown that Cu 4 Si was formed at 530°C, whereas pure Cu film exhibited Cu 4 Si growth at 400°C. Twins are observed in focused ion beam (FIB) images of as-deposited and 400°C annealed, pure Cu film, and these twins result from the intrinsically low stacking-fault energy. Twins appearing in pure Cu film may offer an extra diffusion channel during annealing for copper silicide formation. In Cu-Mo films, the shallow diffusion profiles for Cu into Si were observed through secondary ion mass spectroscopy (SIMS) analysis. Higher activation energy obtained through differential scanning calorimetry (DSC) analysis for the formation of copper silicide further confirms the beneficial effect of Mo on the thermal stability of Cu film.

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Deposition and properties of Mo–N films

Abstract: Articles you may be interested inEffect of energetic particles on the residual stresses in nonhydrogenated amorphous carbon films deposited on grounded substrates by dc magnetron sputtering

Cited by 10 publications

References 17 publications

Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization

Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization

Characterisation of Mo–V–N Coatings Deposited on XC100 Substrate by Sputtering Cathodic Magnetron

Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

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