Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization

Abstract

To realize a low-temperature process for large-scale integration (LSI) and three-dimensional LSI, we proposed a new film formation method that combines sputtering and radical treatment in a low-temperature process without heating the substrate and examined its usefulness. The film formed by the proposed method had almost the same good film quality as that formed by the conventional reactive sputtering method at a substrate temperature of 350–400 °C; moreover, the barrier properties were comparable. This method has many merits, such as the ability to form a film with new properties that cannot be obtained with existing techniques. This method has applications in semiconductor technology as well as in many electronic device fields.