Deposition and characterization of p-type cadmium telluride films

Abstract

Articles you may be interested inProperties of metalorganic chemicalvapordeposition mercury telluride contacts on ptype cadmium telluride The deposition ofCdTe films on foreign substrates by the direct combination of the elements in a gasflow system has the ft.exibility that the conductivity type and electrical resistivity of the film can be controlled by adjusting the composition of the reaction mixture. The deposition and properties of p-type CdTe films are emphasized in this paper because of its importance in thin-film solar cells. Graphite, W Igraphite, mullite, and Corning 7059 glass were used as substrates for the deposition process. While CdTe films deposited on W Igraphite and mullite substrates could be n or p type, depending on the composition of the reaction mixture, all films deposited on graphite substrates were p type, irrespective of the reactant composition, substrate temperature, or the purification of graphite, suggesting that carbon is electrically active in CdTe. The resistivity of ptype CdTe films on W Igraphite and mullite substrates has been controlled for the first time by (1) using a Cd-deficient reaction mixture, and (2) adding dopants (AsH3 or PH 3 ) to the reaction mixture. The resistivity versus composition relation was studied in detail. The optical properties ofneariy stoichiometric, Cd-deficient and Te-deficient CdTe films were also investigated.though the partial pressures of Cd and Te in the reaction 1349

Oxidation of CdTe thin film in air coated with and without a CdCl2 layer

“…Gaussian and Lorentzian fittings were employed to fit the O 1s date. The O 1s XPS consists of two peaks at 530.3 eV from the tellurium oxide and at 531.6 eV from the chemically absorbed oxygen 27–29. The relative oxygen concentration corresponding to the tellurium oxides, which is calculated from the O 1s fitting data, was 60.2 at.% at the surface for the CdTe film coated with a CdCl 2 thin layer, while it was 58.5 at.% for the CdTe film without a CdCl 2 coating layer.…”

Characterization of vacuum evaporated CdTe thin films prepared at ambient temperature

“…For example; Shaaban et al [17] obtained a value of 1.533 eV for CdTe thin films of thickness 1103 nm prepared by thermal evaporation at a deposition temperature of 373 K. Chu et al [28] obtained a value of 1.50 eV for a nearly stoichiometric CdTe film on a glass substrate. Morris and Vanderveen [26] obtained a value of 1.48 70.03 eV for as-deposited and annealed CdTe thin films prepared by using periodic pulse electrolysis (PPE).…”

“…The smallness of grain size was attributed to the low deposition temperature (ambient temperature). According to Chu et al [28] the average grain size in the film depends on substrate temperature and thickness of the film.…”

Structural and electrical properties of vapour phase grown Cd1−xFexTe single crystals

“…Also absence of extra peaks in XRD spectra shows that there are no impurities in the samples and there is no segregation of 'FeTe' either. Several authors also reported only zinc blende structure for CdTe system in thin films [17][18][19][20]. Silva et al [21], and Alvarez et al [22] noticed that X-ray diffraction patterns of Cd 1 − x Fe x Te thin films indicated amorphous and polycrystalline phases respectively with x = 0.05.…”