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Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.

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3DCRT induced a substantial tumor response rate of 61.4% with survival rates at 1, 2 and 3 years of 60.5%, 40.3% and 32.0%, respectively, and a median survival time of 15.2 months in patients with unresectable HCC who had either failed with or were unsuited for TACE. The complications are acceptable and can be managed with conservative treatment. Although we do not know whether there is a survival benefit through the use of this treatment, 3DCRT seems to be a practical method of salvage for this subset of patients. Further study is warranted to evaluate the survival of such patients with and without this treatment.

In positron emission tomographic (PET) scanning, transmission measurements for attenuation correction are commonly performed by using external germanium-68 rod sources. Recently, combined PET and computed tomographic (CT) scanners have been developed in which the CT data can be used for both anatomical-metabolic image formation and attenuation correction of the PET data. The purpose of this study was to evaluate the difference between germanium- and CT-based transmission scanning in terms of their radiation doses by using the same measurement technique and to compare the doses that patients receive during brain, cardiac and whole-body scans. Measurement of absorbed doses to organs was conducted by using a Rando Alderson phantom with thermoluminescent dosimeters. Effective doses were calculated according to the guidelines in the International Commission on Radiation Protection Publication Number 60. Compared with radionuclide doses used in routine 2-[fluorine-18]-fluoro-2-deoxy-D-glucose PET imaging, doses absorbed during germanium-based transmission scans were almost negligible. On the other hand, absorbed doses from CT-based transmission scans were significantly higher, particularly with a whole-body scanning protocol. Effective doses were 8.81 mSv in the high-speed mode and 18.97 mSv in the high-quality mode for whole-body CT-based transmission scans. These measurements revealed that the doses received by a patient during CT-based transmission scanning are more than those received in a typical PET examination. Therefore, the radiation doses represent a limitation to the generalised use of CT-based transmission measurements with current PET/CT scanner systems.

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Cadmium sulfide (CdS) and zinc sulfide (ZnS), direct gap semiconductors with room temperature band-gap energy of 2.42 and 3.66 eV, respectively, form a continuous series of solid solutions (Cd1−xZnxS). The band-gap energy of Cd1−xZnxS can be tailored in the range of the binary band gaps. In this work, polycrystalline films of Cd1−xZnxS have been deposited on glass, SnO2:F/glass, and ZnO:F/glass substrates by the reaction of dimethylcadmium (DMCd), diethlyzinc (DEZn), and propyl mercaptan (PM) in a hydrogen atmosphere. The deposition rate and properties of Cd1−xZnxS films depend on the substrate temperature and the composition and flow rate of the reaction mixture. The deposition rate of Cd1−xZnxS films has been measured at 375 and 425 °C as a function of the DMCd/DEZn molar ratio in the reaction mixture. Without intentional doping, the deposited films are of high lateral resistivity, and the resistivity increases with increasing ZnS concentration. The electrical resistivity of the deposited films can be reduced by using octyl chloride or trimethylaluminum as a dopant. The effects of DMCd/DEZn and (DMCd+DEZn)/PM molar ratios on the optical and electrical properties of Cd1−xZnxTe films have been investigated. Thin film heterojunctions have been prepared by the successive in situ metal organic chemical vapor deposition of Cd0.7Zn0.3S (Eg∼2.8 eV), an absorber, and the ohmic contact on a ZnO:F/glass substrate, and their electrical and photovoltaic properties characterized.