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A Z-scheme CeO2–AgI photocatalyst was successfully fabricated and its photocatalytic mechanism has been unraveled.

Facile preparation of metal–organic framework (MOF) derived earth-abundant nickel phosphide (Ni2P) by a simple, cost-effective procedure is described. Ni2P is recognized as a suitable replacement for expensive noble metal cocatalysts used for H2 production by water splitting. Ni2P nanoparticles were used to prepare a Ni2P/CdS composite with improved photocatalytic properties. Crystal structure and surface morphology studies showed that Ni-MOF spheres readily transform into Ni2P particles, and TEM images indicated the presence of Ni2P nanoparticles on CdS. The optical properties and charge carrier dynamics of the composite material exhibited better visible light absorption and improved suppression of charge carrier recombination. X-ray photoelectron spectra confirmed the presence of Ni2P on CdS. The synthesized materials were tested for photocatalytic hydrogen production with lactic acid as a scavenger under irradiation in a solar simulator. The rate of H2 production with Ni2P/CdS was 62 times greater than that with pure CdS. The superior activity of the composite material is attributed to the ability of Ni2P to separate the photoexcited charge carriers from CdS and provide good electrical conductivity. The optimized composite material also exhibited better photocatalytic activity than Pt cocatalyzed CdS. Based on the experimental results, a possible electron–hole transfer mechanism is proposed.

Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV(ds)). A crucial figure-of-merit for analog/RF transistors is the intrinsic voltage gain (g(m)/g(ds)) which requires both high g(m) (primary component of f(T)) and low g(ds). Obtaining current saturation has become one of the key challenges in graphene device design. In this work, we study theoretically the influence of the dielectric thickness on the output characteristics of graphene FETs by using a surface-potential-based device model. We also experimentally demonstrate that by employing a very thin gate dielectric (equivalent oxide thickness less than 2 nm), full drain current saturation can be obtained for large-scale chemical vapor deposition graphene FETs with short channels. In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements.

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Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors (MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved MOSFET performance beyond the 22 nm node, or provide novel functionality for, e.g. ‘beyond CMOS’ devices. Graphene, with its novel and electron–hole symmetric band structure and its high carrier mobilities and thermal velocities, is one such material that has garnered a great deal of interest for both purposes. Single and few layer carbon sheets have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapour deposition, and field-effect transistors have been demonstrated with room-temperature mobilities as high as 10 000 cm2 V−1 s−1. But graphene is a gapless semiconductor and gate control of current is challenging, off-state leakage currents are high, and current does not readily saturate with drain voltage. However, various ways to overcome, adapt to, or even embrace this property are now being considered for device applications. In this work we explore through illustrative examples the potential of and challenges to graphene use for conventional and novel device applications.

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