Deposition and characterization of ceria layers using the MOCVD method

Sawka, A.; Kwatera, A.; Andreasik, P.

doi:10.1016/j.matlet.2017.06.012

Cited by 9 publications

(8 citation statements)

References 6 publications

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“…The measured bandgap values well agreed with the bandgap of CeO2 reported in literature [12]. CeO2 film prepared at room temperature (300 K) shows higher intensity and PL intensity is decreased at higher temperatures (573 K and 873 K) [13,30]. The PL studies revealed the energy gap of 3.05-3.10 eV range [13].…”

Section: Microstructural Analysissupporting

confidence: 88%

“…CeO2 films are deposited using spray pyrolysis [25,26], sol-gel [27,28], thermal evaporation [29], electron-beam evaporation [30], RF magnetron sputtering [31] and pulsed laser deposition (PLD) techniques [11][12][13][14]. PLD is highly unique to produce high quality films in broad range of deposition conditions, such as substrate temperature, ambient gas, pressure of the gases, laser energy and repetition rate [32].…”

Section: Introductionmentioning

confidence: 99%

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Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition

Balakrishnan

Panda

Raghavan

et al. 2019

J Mater Sci: Mater Electron

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Cerium oxide (CeO2) thin films were deposited on Pt (111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition (PLD) method at different temperatures such as, 300 K, 573 K and 873 K with 3×10-2 mbar oxygen partial pressure. The prepared films were systematically investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and electrical measurement system. XRD analysis clearly shows improved crystallinity of CeO2 films prepared at 573 and 873 K substrate temperatures. The AFM analysis indicated the uniform distribution of the nanocrystallites and dense structure with the roughness (RMS) of ~ 2.1-3.6 nm. The photoluminescence (PL) studies of the films showed a broad peak at ~ 366-368 nm, indicating the optical bandgap of 3.37-3.38 eV. The electrical property study showed minimum leakage current density of 2.010-7 A/cm 2 at 873 K, which was measured at 100 kV and this valuewas much lower than that of the CeO2 film deposited at 300 K. The dielectric constants are increased and dielectric loss values decreased for the films with increasing substrate temperature.

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Section: Microstructural Analysissupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition

Balakrishnan

Panda

Raghavan

et al. 2019

J Mater Sci: Mater Electron

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“…The Mg/Zr and Mg/Ce ratios in the formed films strongly depend on the thermochemical characteristics of the precursors used in co-deposition, namely, on the temperature stability of the vapors. In particular, for magnesium and cerium precursors, the effective MOCVD temperature ranges coincide: >400 • C [14,63]. This indicates the efficient vapor decomposition of both compounds Mg(tmeda)(thd) 2 and Ce(thd) 4 at the deposition temperature 450 • C used here.…”

Section: Resultsmentioning

confidence: 67%

Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

et al. 2021

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Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials and structures being effective for secondary electron emission (SEE) and their diagnostics. Then, Metal-Organic Chemical Vapor Deposition (MOCVD) coupled with the specially selected precursor is suggested here as a new technique that transforms the refractory oxides to nanoscale, defect-disordered materials able to solid-solid interaction at 450 °C. Primary experiments have been performed for demanded mixed films based on MgO with ZrO2 and CeO2 additions. A dopant impact on facilitating the formation of oxygen vacancies in the host oxide and on the features of new mixed phases have been studied by new diagnostic means, based primarily on chemical method of differential dissolution. The method brought out the effective solvents that were the probes for identifying the nanoscale and amorphous phases possessing by the different defects on the surface of MgO films and determining contents of these phases. This approach allowed us to explain the origin of mixed phases and to estimate contribution of each from them in the macroscopic SEE properties.

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“…The magnitude of the Gr x /Re x 2 expression was less than 0.01 (Gr is the Grashof number; Re is the Reynolds number; x is the distance from the gas inflow point) [35][36][37]. The use of this criterion is helpful in the synthesis of dense and uniform-thickness layers.…”

Section: Methodsmentioning

confidence: 99%

“…Quartz glass substrates were used as substitute substrates. The main advantages of their use are the easy observation and assessment of the obtained layers due to the transparency of the substrates, and their low cost [36,37,39].…”

Section: Methodsmentioning

confidence: 99%

Deposition of Gadolinia-Doped Zirconia Layers Using Metalorganic Compounds at Low Temperatures

Sawka

2021

Materials

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This paper shows the results of an investigation on the synthesis of non-porous and nanocrystalline ZrO2-Gd2O3 layers by metalorganic chemical vapor deposition (MOCVD) with the use of Zr(tmhd)4 (tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)zirconium(IV)) and Gd(tmhd)3 (tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gadolinium(III)). Argon and air were used as carrier gases. The molar content of Gd(tmhd)3 in the gas reaction mixture was as follows: 10% and 20%. The layers were synthesized on tubular substrates made of quartz glass at the temperatures of 550–700 °C. Synthesis conditions were established using the Grx/Rex2 expression (Gr is the Grashof number; Re is the Reynolds number; x is the distance from the gas inflow point). The value of this criterion was below 0.01. ZrO2-Gd2O3 layers synthesized at 600–700 °C were crystalline. When the molar content of Gd(tmhd)3 in the gas reaction mixture was 10 mol.%, a relationship between the chemical composition of the gas reaction mixture and that of the deposited layer could be observed. The synthesized layers underwent scanning electron microscopy, as well as X-ray analysis. The transparency of coated and uncoated glass was tested using UV–Vis spectroscopy. Their chemical composition was examined with the use of an EDS analyzer.

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Deposition and characterization of ceria layers using the MOCVD method

Cited by 9 publications

References 6 publications

Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition

Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition

Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

Deposition of Gadolinia-Doped Zirconia Layers Using Metalorganic Compounds at Low Temperatures

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