Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

“…Furthermore, these GaN films show a much better thickness homogeneity than the GaN films grown using traditional PLD as well as with the combination of ECR-PEMOCVD and radio-frequency magnetron sputtering. [2][3][4][22][23][24][25][26][27][28] In situ RHEED, SEM and AFM measurements were deployed to further investigate the surface morphologies of the as-grown GaN films. After annealing for 60 min, atomically flat Cu(111) was achieved with sharp and clear RHEED patterns, as shown in Fig.…”

“…Furthermore, the surface morphologies of the GaN films achieved in this work are comparable with those grown by other groups. [2][3][4][22][23][24][25][26] In addition, polarized light microscopy and FESEM measurements have revealed that crack-free GaN films can be obtained with a very small cooling rate of 3 °C min −1 from the growth temperature to room temperature due to the large coefficient of thermal expansion (CTE) mismatch between the nitrides and the Cu substrate. 31 Therefore, as for thin films, only by controlling the cooling rate, crack-free films can be obtained.…”

“…[19][20][21] So far, many III-nitride films have been grown on metal substrates using traditional PLD, [2][3][4][22][23][24] and the combination of electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) and radio-frequency magnetron sputtering. [25][26][27][28] Particularly, GaN films grown on Cu substrates using the traditional PLD technology have been demonstrated by S. Inoue et al 4 However, GaN films grown by these techniques usually show a relatively poor thickness homogeneity due to the highly directional distribution of the precursors on the metal substrates. [2][3][4][22][23][24][25][26][27][28] If the GaN-based optoelectronic devices were prepared with such GaN films, the product qualification rate would be very low.…”

“…[25][26][27][28] Particularly, GaN films grown on Cu substrates using the traditional PLD technology have been demonstrated by S. Inoue et al 4 However, GaN films grown by these techniques usually show a relatively poor thickness homogeneity due to the highly directional distribution of the precursors on the metal substrates. [2][3][4][22][23][24][25][26][27][28] If the GaN-based optoelectronic devices were prepared with such GaN films, the product qualification rate would be very low. 19 What is more, GaN films grown on Cu substrates lack a comprehensive study.…”

Porous nitrogen-doped graphene/carbon nanotubes composite with an enhanced supercapacitor performance

“…Moreover, it might be that nitrogen atoms have been successfully doped into graphene/CNTs composites. In order to further study the structures of the composites, the grain size was evaluated by the well-known Scherrer formula [41]:…”