Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

Yu, Maituo; Moayedpour, Saeed; Yang, Shuyang; Dardzinski, Derek; Wu, Chunzhi; Pribiag, Vlad; Marom, Noa

doi:10.1103/physrevmaterials.5.064606

Cited by 16 publications

(26 citation statements)

References 62 publications

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“…The calculated magnetic moment, μ eff /Eu, was 6.93 μB and μ eff /Eu was found to be 6.9 μ B throughout the EuS/Bi 2 Se 3 film [ 14 ]. Similar to the EuS/InAs film, the magnetic part was mostly concentrated in the EuS thin film with a restriction of the Eu moment in the EuS layer closest to the InAs [ 32 ].…”

Section: Resultsmentioning

confidence: 99%

The Influence of Yb Doping and Sintering Conditions on the Magnetocaloric and Mechanical Properties of EuS

Chen

et al. 2022

Molecules

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For this work, europium monosulfide (EuS) powders were prepared by sulfurizing Eu2O3 powder with CS2 gas. The synthesized EuS powders were sintered by SPS at temperatures in the 800–1600 °C range for 0.33–1 h at 50 MPa under vacuum conditions. The influences of Yb doping and sintering conditions on the magnetocaloric and mechanical properties of EuS were investigated systematically. An increase in sintering temperature caused the rise of lattice parameters of EuS, whereas Yb doping caused them to drop. SEM showed that the grain size of the EuS increased with sintering temperatures in the 1000–1400 °C range. Higher sintering temperatures can enlarge the magnetizability and saturation magnetization of EuS compact. On the contrary, Yb doping can weaken the magnetizability and saturation magnetization of EuS compact. All sintered polycrystalline EuS compacts had weaker thermomagnetic irreversibility and lower magnetic anisotropy.

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Section: Resultsmentioning

confidence: 99%

The Influence of Yb Doping and Sintering Conditions on the Magnetocaloric and Mechanical Properties of EuS

Chen

et al. 2022

Molecules

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“…Once the interface configuration was optimized, the thickness of each material was increased until conver-gence of the electronic properties was achieved. 47 atomic layers of the semiconductor were used, based on previous band gap convergence studies [29,110,111]. The Heusler thickness was converged with respect to the density of states and magnetic moment, which should approach the bulk limit at the center of the slab [98].…”

Section: Resultsmentioning

confidence: 99%

“…The observation of zero bias peaks in this system has sparked an active debate regarding their origin [23][24][25][26][27]. In particular, experimental [28] and computational [29] studies of the EuS/InAs interface have suggested that the proximity-induced magnetic moment in InAs may be too small and too localized to produce sufficiently strong exchange coupling. Exploration of alternatives to EuS may advance the understanding of these proposed mechanisms as they relate to the atomistic structure and electronic properties of the interface and ultimately lead to the discovery of new materials platforms for the realization of MZMs.…”

Section: Introductionmentioning

confidence: 99%

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Heischmidt¹,

Yu²,

Dardzinski³

et al. 2022

Preprint

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We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti2MnIn and Ni2MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 µB are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti2MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni2MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

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“…These values have been used successfully for various simulations of InAs surfaces and interfaces. [26][27][28] Spin orbit coupling was applied throughout 29 and a dipole correction was applied along the z-axis of the surface. 30 For all self consistent field (SCF) and density of states (DOS) calculations, Γ-centered Monkhorst-Pack k-point grids with densities of 5×5×1, and a cutoff energy of 350 eV were used.…”

Section: Methodsmentioning

confidence: 99%

Scale-dependent optimized homoepitaxy of InAs(111)A

Zelzer¹,

Batabyal²,

Dardzinski³

et al. 2022

Preprint

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We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic scale impurities and the larger scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As 2 flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro-and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium

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Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

Cited by 16 publications

References 62 publications

The Influence of Yb Doping and Sintering Conditions on the Magnetocaloric and Mechanical Properties of EuS

The Influence of Yb Doping and Sintering Conditions on the Magnetocaloric and Mechanical Properties of EuS

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Scale-dependent optimized homoepitaxy of InAs(111)A

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