Two-dimensional transition metal dichalcogenides (TMDs) have been attracting significant interest 1-8 due to a range of properties, such as layer-dependent inversion symmetry, valleycontrasted Berry curvatures, and strong spin-orbit coupling (SOC). Of particular interest is niobium diselenide (NbSe 2 ), whose superconducting state in few-layer samples is profoundly affected by an unusual type of SOC called Ising SOC 7 . Combined with the reduced dimensionality, the latter stabilizes the superconducting state against magnetic fields up to ~35 T and could lead to other exotic properties such as nodal and crystalline topological superconductivity 9-14 . Here, we report transport measurements of few-layer NbSe 2 under inplane external magnetic fields, revealing an unexpected two-fold rotational symmetry of the superconducting state. In contrast to the three-fold symmetry of the lattice, we observe that

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

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We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti2MnIn and Ni2MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 µB are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti2MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni2MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.