Spin transport in ferromagnet-InSb nanowire quantum devices

Yang, Zedong; Heischmidt, Brett; Gazibegović, Saša; Badawy, Ghada; Car, Diana; Crowell, Paul; Bakkers, Erik P. A. M.; Pribiag, Vlad

doi:10.1117/12.2567749

Cited by 3 publications

(3 citation statements)

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“…As additional experiments, we perform DC measurements using devices with only two ferromagnetic contacts (F-F devices), which is commonly known as the local spin valve geometry [14]. One of these devices is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

et al. 2020

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We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.

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Section: Resultsmentioning

confidence: 99%

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

et al. 2020

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“…Low-dimensional narrow bandgap InSb nanostructures, such as nanowires and quantum wells, have in recent years attracted great interests. Due to their small electron effective mass, strong spin-orbit interaction (SOI), and large Landé g-factor, these nanostructures have potential applications in high-speed electronics 1 , infrared optoelectronics 2 , spintronics 3 , quantum electronics 4,5 and topological quantum computation 6 . The past decade has witnessed booming investigations of devices made from epitaxially grown InSb nanowires, including field-effect transistors 7,8 , single [9][10][11] and double quantum dots 12,13 , and semiconductor-superconductor hybrid quantum devices [14][15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

et al. 2021

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A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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“…Low-dimensional III-V narrow bandgap semiconductor nanostructures have attracted significant interests due to their potential applications in nanoelectronics, 1,2 infrared optoelectronics, 3,4 spintronics, [5][6][7] and quantum electronics. [8][9][10][11][12][13] Among them, strong spin-orbit interaction (SOI) and large Landé g-factor have made InAs and InSb nanostructures widely used in realization of novel devices such as spin transistors, 14,15 spin-orbit qubits, 16,17 and topological quantum devices.…”

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confidence: 99%