Dependence of photoluminescence of silicon on conditions of pressure-annealing

Misiuk, A.; Surma, Hańcza B.; Jun, J.; Bąk‐Misiuk, J.; Domagała, J.; Antonova, I. V.; Popov, V.; Romano‐Rodríguez, A.; López, Manuel Recuero

doi:10.1016/s0925-8388(98)01017-2

Cited by 8 publications

(3 citation statements)

References 8 publications

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“…This is because preannealing under high pressure can generate many stable nuclei for oxygen precipitates, as shown in Fig. 2, in accordance with Misiuk's research [10].…”

Section: Article In Presssupporting

confidence: 83%

Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

Xu¹,

Yang²,

Ma³

et al. 2003

Physica B: Condensed Matter

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“…This is because preannealing under high pressure can generate many stable nuclei for oxygen precipitates, as shown in Fig. 2, in accordance with Misiuk's research [10].…”

Section: Article In Presssupporting

confidence: 83%

Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

Xu¹,

Yang²,

Ma³

et al. 2003

Physica B: Condensed Matter

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“…Such specific oxygen related defects remained to be distributed in pSi after anodization and could be responsible for quenching of pSi PL (compare [9]). Significant suppression of dislocation related luminescence in the substrates subjected to HP-HT treatment at 1100±1400 K has been confirmed by us [10]. So one cannot exclude that the pressurestimulated defects can also influence the PL of pSi.…”

Section: Resultsmentioning

confidence: 62%

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Misiuk

Surma

Bąk‐Misiuk

et al. 2000

phys. stat. sol. (a)

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Photoluminescence (PL) of porous silicon (pSi) prepared from Czochralski silicon (Cz-Si) annealed up to 1620 K at enhanced pressure of argon up to 1 GPa (HP-HT treatment) was investigated. The intensity of PL with maximum at 680±720 nm decreases with the pressure for pSi prepared from the substrates treated at 1400 K, and increases with the pressure for pSi prepared from the substrates treated at 1620 K. The pSi films prepared from the HP-HT treated substrates were relaxed, contrary to those on the substrates annealed at 1620 K for 30 min at 10 5 Pa. Although our results revealed that photoluminescence properties of pSi depend significantly on the presence of defects created during the oxygen precipitation process, the role of other defects such as non-radiative recombination centres and metallic contamination should be still under consideration.

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“…Precipitation and other transformations of an oxygen admixture in Cz-Si annealed at some particular temperature are strongly influenced by the hydrostatic pressure (HP) of the ambient atmosphere, especially at HT (high temperature) above 670 K. This phenomenon is related to the creation under HP of more numerous nucleation sites for oxygen precipitation (NCs); the diffusion rates of oxygen and silicon as well as the misfit at the oxygen-related and other defects/Si matrix boundary are also affected significantly and usually decrease at HP [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of high temperature–pressure on nitrogen-doped Czochralski silicon

Misiuk¹,

Sgorbini²,

Yang³

et al. 2004

J. Phys.: Condens. Matter

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The effects of enhanced hydrostatic pressure (HP, up to 1.2 GPa) on the properties of nitrogen-containing Cz-Si:N (N content , interstitial oxygen concentration 9 × 1017 cm−3) and of Czochralski-grown silicon (Cz-Si, reference samples) treated for 5 h at 1070–1570 K–HP have been investigated by photoluminescence, x-ray and infrared absorption methods. HP acts on Cz-Si:N and on Cz-Si in a similar way: oxygen precipitation and creation of numerous cluster-like and extended defects are stimulated, especially at 1230–1400 K. The small cluster-like oxygen-related defects are, however, more numerous in HP treated Cz-Si:N while the extended ones (dislocations) are created at 1230 K in a lowered concentration. A qualitative explanation of the observed effects has been proposed.

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Dependence of photoluminescence of silicon on conditions of pressure-annealing

Cited by 8 publications

References 8 publications

Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Effect of high temperature–pressure on nitrogen-doped Czochralski silicon

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