Dependence of oriented BN films on Si(100) substrate temperature

Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD

“…The full widths at half maximum (FWHM) of the main peak are about 260 cm À 1 of 0 V, 200 cm À 1 of 200 V, and 160 cm À 1 of 400 V, respectively. The change in the FWHM means that the crystallinity of the films [13] deposited with the bias is superior to that of the films without the bias, and the higher bias results in higher crystallinity. The XRD spectra of the samples show similar variation in the structures with the different bias, as seen in Fig.…”

Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors

“…The R Value, calculated from a sample's FTIR spectrum, is defined to be the ratio of the intensity corresponding to A2u peak to the intensity corresponding to the E1u peak. [29][30][31] The equation is illustrated below:…”

“…The origin of the alignment of h-BN in such thin films is typically attributed to the high compressive stress experienced by the h-BN film. 8,10,29 A compressive stress model has been frequently used to account for the stress variation in thin films: 32,33 𝜎 ∝ √𝐸 𝑅 𝐽 + 𝑘𝐸 5 3…”

Theoretical Study of Adsorption of Group IIIA Nitrides on Si(111)

“…All the above make the study of group IIIA nitrides at Si surfaces very interesting and potentially useful. Subjects of particular interest are the geometric and electronic structure of chemisorbed group IIIA nitrides and the growth of their films on Si surface, BN, , AlN, ,, GaN, − ,− and InN. − …”