Demonstration of room-temperature laser action at 25 µm from Cr^2+:Cd_085Mn_015Te

Hömmerich, U.; Wu, Xing; Davis, V.R.; Trivedi, Sudhir; Grasza, K.; Chen, R. J.; Kutcher, Stan

doi:10.1364/ol.22.001180

Cited by 95 publications

(47 citation statements)

References 7 publications

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“…In particular, these chalcogenides doped with Cr 2+ ions have already been shown to produce highly efficient and broadly tunable SE in different lasing modes in the 2-3 µm spectral region [52][53][54]. As before, activated semiconductor crystals, especially of the II-VI family, stimulate the imagination and foster corresponding activity of researchers in the development of SSLs with "electrical" pumping (see, e.g.…”

Section: Anisotropic Chloride Bromide Sulphide Oxychloride Oxyflumentioning

confidence: 89%

Laser crystals and ceramics: recent advances

Kaminskii

2007

Laser & Photonics Reviews

368

236

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After a brief examination of known insulating laser crystals and the stimulated emission channels of their generating activator ions, this article reviews recent advances in the development of novel lasing crystals and ceramics, as well as inorganic and organic nonlinear-laser crystals for χ (3) and cascaded χ (3) ↔ χ (2) frequency converters. Several new modern attractive technologies in the physics and techniques of crystalline lasers are also discussed.Section of the crystal structure of Na3Li (SeO4)

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Section: Anisotropic Chloride Bromide Sulphide Oxychloride Oxyflumentioning

confidence: 89%

Laser crystals and ceramics: recent advances

Kaminskii

2007

Laser & Photonics Reviews

368

236

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“…In 1996 Deloach et al [1], characterized many transition metal doped II-VI semiconductor gain media identifying multiple materials suitable for midinfrared laser emission. Materials such as Cr:ZnSe, Cr:CdSe, Cr:Cd x Mn 1-x Te and Cr:ZnS were shown to possess many desirable characteristics such as large emission cross-sections, broad gain and absorption bandwidths, no excited state absorption and room temperature operation, with all of these materials having since demonstrated mid-infrared laser operation [2][3][4][5]. Chromium laser technology has matured to demonstrate high power, widely tunable, and narrow line-width operation at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Compact Cr:ZnS Channel Waveguide Laser Operating at 2360 nm

MacDonald¹,

Beecher²,

Berry³

et al. 2013

Advanced Solid-State Lasers Congress

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A compact mid-infrared channel waveguide laser is demonstrated in Cr:ZnS with a view to power scaling chromium laser technology utilizing the thermo-mechanical advantages of Cr:ZnS over alternative transition metal doped II-VI semiconductor laser materials. The laser provided a maximum power of 101 mW of CW output at 2333 nm limited only by the available pump power. A maximum slope efficiency of 20% was demonstrated.

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“…1,2 Recent research has demonstrated the great potential of CMT for application in room-temperature radiation detection. Compared to the widely investigated cadmium zinc telluride (CZT), CMT offers some distinct advantages that make it a good candidate to compete with CZT in such applications.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

Yang

Bolotnikov

Li³

et al. 2010

Journal of Elec Materi

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Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its (ls) e value was 2.6 9 10 À3 cm 2 /V, which is acceptable for thin detectors, including their application in medicine.

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Demonstration of room-temperature laser action at 25 µm from Cr^2+:Cd_085Mn_015Te

Cited by 95 publications

References 7 publications

Laser crystals and ceramics: recent advances

Laser crystals and ceramics: recent advances

Compact Cr:ZnS Channel Waveguide Laser Operating at 2360 nm

Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

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