Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators

Lin, Hongtao; Li, Lan; Zou, Yi; Danto, Sylvain; Musgraves, J. David; Richardson, Kathleen; Kozacik, Stephen; Murakowski, Maciej; Prather, Dennis W.; Lin, Pao Tai; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C.; Hu, Juejun

doi:10.1364/ol.38.001470

Cited by 91 publications

(57 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(I, J) Ge-on-Si [15] (© 2015 IEEE): (I) a mid-IR Ge-on-Si ridge waveguide; (J) TEM cross-sectional image of the Ge-on-Si film showing that the dislocations are confined at the Si/Ge interface. (K, L) Chalcogenide glass-on-silicon [16] (© 2013 Optical Society of America): (K) top-view optical micrograph of a ChG micro-disk resonator, (L) cross-sectional structure and simulated whispering gallery mode profile in the micro-disk at 5.2-μm wavelength; the high-index As 2 Se 3 glass forms the core layer surrounded by low-index Ge 23 Sb 7 S 70 glass cladding.…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

“…The recently demonstrated suspended Ge membrane devices hold the potential to fully utilize the broad transparency band of Ge, although optical functions of these devices at >3-μm wavelength are yet to be realized [29,30]. Infrared-transparent chalcogenides and halides, on the other hand, can be monolithically deposited on Si or dielectric substrates via thermal evaporation or sputtering, with waveguides defined by using two compositions of different indices as core and cladding layers ( Figure 3K-L) [16,[31][32][33][34][35][36][37][38]. Compared to Si or Ge, the drawback of this approach is that chalcogenides and halides are generally not considered compatible with CMOS foundry processes.…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

Self Cite

View full text Add to dashboard Cite

Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

show abstract

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this paper, we present mid-IR photonic integration based on chalcogenide materials as well as sensing applications of the chip-scale mid-IR photonic platform. ChG mid-IR waveguide-coupled resonator fabrication [77], although the process is generic and can be equally implemented to other ChG on-chip device processing. The devices were fabricated on (100) silicon wafers topped with 300 nm thermal oxide as the starting substrate.…”

Section: Integrated Photonics For Infrared Spectroscopic Sensingmentioning

confidence: 99%

Integrated photonics for infrared spectroscopic sensing

et al. 2017

Self Cite

View full text Add to dashboard Cite

Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical analysis. Traditional IR spectroscopy relies on fragile bench-top instruments located in dedicated laboratory settings, and is thus not suitable for emerging field-deployed applications such as in-line industrial process control, environmental monitoring, and point-ofcare diagnosis. Recent strides in photonic integration technologies provide a promising route towards enabling miniaturized, rugged platforms for IR spectroscopic analysis. Chalcogenide glasses, the amorphous compounds containing S, Se or Te, have stand out as a promising material for infrared photonic integration given their broadband infrared transparency and compatibility with silicon photonic integration. In this paper, we discuss our recent work exploring integrated chalcogenide glass based photonic devices for IR spectroscopic chemical analysis, including on-chip cavityenhanced chemical sensing and monolithic integration of mid-IR waveguides with photodetectors.

show abstract

“…Nevertheless, the early absorption of the buried oxide around of λ = 3.6 µm limits its operation to the lowest spectral region of the mid-IR band. Other platforms such as silicon-on-sapphire (SOS) or silicon-on-silicon nitride (SON) were able to extend the cut-off wavelength up to 6 µm [5,6], whereas silicon-on-porous silicon (SiPSi), suspended silicon schemes, or the implementation of hybrid approaches permitted the Si transparency window to be fully exploited until 8 µm [7,8]. Alternatively, the use of Ge-on-Si platforms for mid-IR integrated photonics allowed the wavelength range to be further extended up to 14…”

Section: Introductionmentioning

confidence: 99%

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Ramírez¹,

Vakarin²,

Frigerio³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

To cite this version:J-M Ramirez, V Vakarin, J Frigerio, P Chaisakul, D Chrastina, et al.. Ge-rich graded-index Si 1-x Ge x waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics. Optics Express, Optical Society of America, 2017, 25 (6) Abstract:This work explores the use of Ge-rich graded-index Si 1-x Ge x rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si 1-x Ge x waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~ 1.4 octave span while retaining an optimum third-order nonlinear parameter, γ eff . These results confirm the potential of Ge-rich graded-index Si 1-x Ge x waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

show abstract

Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators

Cited by 91 publications

References 24 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Integrated photonics for infrared spectroscopic sensing

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Contact Info

Product

Resources

About