2017
DOI: 10.1117/12.2267886
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Integrated photonics for infrared spectroscopic sensing

Abstract: Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical analysis. Traditional IR spectroscopy relies on fragile bench-top instruments located in dedicated laboratory settings, and is thus not suitable for emerging field-deployed applications such as in-line industrial process control, environmental monitoring, and point-ofcare diagnosis. Recent strides in photonic integration technologies provide a promising route towards enabling miniaturized, rugged platforms for IR spectros… Show more

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“…Chalcogenide-based thin films are important for modern electro-optic devices such as thin-film infrared transistors, optical waveguides, or phase-recording media. , Especially, Ge–Sb–Te films with a typical composition of Ge 2 Sb 2 Te 5 (GST) located at the pseudo-binary line connecting GeTe and Sb 2 Te 3 in the phase diagram have been applied as phase-change materials. However, its nucleation-dominated crystallization has led to slow phase-transition speed. , For example, the writing speed of commercialized optical disk and phase-change memory (PCM) products is limited by tens of nanoseconds due to the crystalline nucleation during the crystallization of amorphous GST. , On the other hand, Sb-rich thin films have been elucidated to possess a different crystallization behavior . The growth-dominated crystallization allows Sb-rich thin films to crystallize at faster speeds.…”
Section: Introductionmentioning
confidence: 99%
“…Chalcogenide-based thin films are important for modern electro-optic devices such as thin-film infrared transistors, optical waveguides, or phase-recording media. , Especially, Ge–Sb–Te films with a typical composition of Ge 2 Sb 2 Te 5 (GST) located at the pseudo-binary line connecting GeTe and Sb 2 Te 3 in the phase diagram have been applied as phase-change materials. However, its nucleation-dominated crystallization has led to slow phase-transition speed. , For example, the writing speed of commercialized optical disk and phase-change memory (PCM) products is limited by tens of nanoseconds due to the crystalline nucleation during the crystallization of amorphous GST. , On the other hand, Sb-rich thin films have been elucidated to possess a different crystallization behavior . The growth-dominated crystallization allows Sb-rich thin films to crystallize at faster speeds.…”
Section: Introductionmentioning
confidence: 99%