2017
DOI: 10.1364/oe.25.006561
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Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Abstract: To cite this version:J-M Ramirez, V Vakarin, J Frigerio, P Chaisakul, D Chrastina, et al.. Ge-rich graded-index Si 1-x Ge x waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics. Optics Express, Optical Society of America, 2017, 25 (6) Abstract:This work explores the use of Ge-rich graded-index Si 1-x Ge x rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradien… Show more

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Cited by 48 publications
(35 citation statements)
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“…The first experimental characterization of nonlinear refractive index in SiGe alloys confirms the advantages of using Ge-rich SiGe materials [6]. Then the possibility to achieve flat anomalous dispersion waveguides will be shown, opening strong perspectives towards the realization of efficient wideband optical sources [7].…”
Section: Introductionmentioning
confidence: 82%
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“…The first experimental characterization of nonlinear refractive index in SiGe alloys confirms the advantages of using Ge-rich SiGe materials [6]. Then the possibility to achieve flat anomalous dispersion waveguides will be shown, opening strong perspectives towards the realization of efficient wideband optical sources [7].…”
Section: Introductionmentioning
confidence: 82%
“…The waveguide design has been optimized to meet three different requirements: (i) small effective mode area, (ii) good confinement of the optical mode with the Ge-rich material ; (iii) flat anomalous dispersion in a wide spectral range [7]. The final waveguide design is reported in Fig 5.…”
Section: Design Of Supercontinuum Sourcementioning
confidence: 99%
“…For instance, at a wavelength of 3 µm, n Si = 3.43 and n Ge = 4.04. It is worth noting that, for SiGe waveguides, the mode dispersion dominates over the material refractive-index dispersion in the MIDIR [34]. Consequently, the mode-dispersion engineering approach by means of geometric parameter optimization was chosen to obtain the polarization-insensitive and wideband integrated photonic components.…”
Section: Methodsmentioning
confidence: 99%
“…The ultra-wideband polarization-insensitive building blocks presented here pave the way for the development of high-performance on-chip photonic circuits for next-generation mid-infrared free-space communication systems.lock-in detection [15,16]. Moreover, in order to reach higher MIDIR wavelengths, various photonic platforms were developed, such as III-V materials [17][18][19], chalcogenide [20][21][22][23], and silicon and silicon-compatible materials [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. MIDIR photonic integrated circuits leveraging the mature Si technology have great potential for low-power consumption and low-cost systems that are meant to outperform existing technologies.…”
mentioning
confidence: 99%
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