Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

Chen, Yunfeng; Lu, Hai; Chen, Dunjun; Ren, F.; Zhou, Dong; Zhang, Rong; Zheng, Yue

doi:10.1116/1.4921589

Cited by 9 publications

(1 citation statement)

References 19 publications

(17 reference statements)

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“…It is the optimal material choice for high speed VLC receiver in various environments. However, the previous III-nitride based PDs studies have focused on the typical characteristics of responsivity and pulse measurements as stand-alone devices using metal-semiconductor-metal (MSM) [18][19][20][21][22][23], p-i-n [24][25][26][27], and multiple quantum-wells (MQW) [28][29][30][31][32] structures. Their performance as optical receiver in VLC links has yet to be investigated.…”

Section: Introductionmentioning

confidence: 99%

32 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector

Chen

Liu

et al. 2018

Opt. Express

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Section: Introductionmentioning

confidence: 99%

32 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector

Chen

Liu

et al. 2018

Opt. Express

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Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

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properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

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