Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Chen, Robert; Gupta, Shanti S.; Huang, Yi‐Chiau; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

doi:10.1021/nl402815v

Cited by 97 publications

(81 citation statements)

References 60 publications

(79 reference statements)

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“…For instance, Kuo et al [86] have exploited the high nonlinear susceptibility of gallium arsenide to generate a WGM second-harmonic spectrum ( Figure 8A), while Haigh et al [90] have enhanced Brillouin scattering by tuning of a magneto-optical yttrium iron garnet spherical cavity system. Recent materials/complexes of choice include diamond ( Figure 8B) [87], constrained germanium-tin alloy ( Figure 8C) [88], crystalline lithium niobate ( Figure 8D) [89], high-Q magnesium fluoride [91], or caesium lead halide perovskite-coated silica [92]. There are also magneto-and electrostrictive materials that suffer deformations from an applied field [93] and some isotropic crystalline platforms whose thermal characteristics enable nano-Kelvin thermometry, e.g.…”

Section: Potential Materialsmentioning

confidence: 99%

Advances in optoplasmonic sensors – combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

et al. 2017

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Nanophotonic device building blocks, such as optical nano/microcavities and plasmonic nanostructures, lie at the forefront of sensing and spectrometry of trace biological and chemical substances. A new class of nanophotonic architecture has emerged by combining optically resonant dielectric nano/microcavities with plasmonically resonant metal nanostructures to enable detection at the nanoscale with extraordinary sensitivity. Initial demonstrations include single-molecule detection and even single-ion sensing. The coupled photonic-plasmonic resonator system promises a leap forward in the nanoscale analysis of physical, chemical, and biological entities. These optoplasmonic sensor structures could be the centrepiece of miniaturised analytical laboratories, on a chip, with detection capabilities that are beyond the current state of the art. In this paper, we review this burgeoning field of optoplasmonic biosensors. We first focus on the state of the art in nanoplasmonic sensor structures, high quality factor optical microcavities, and photonic crystals separately before proceeding to an outline of the most recent advances in hybrid sensor systems. We discuss the physics of this modality in brief and each of its underlying parts, then the prospects as well as challenges when integrating dielectric nano/microcavities with metal nanostructures. In Section 5, we hint to possible future applications of optoplasmonic sensing platforms which offer many degrees of freedom towards biomedical diagnostics at the level of single molecules.

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Section: Potential Materialsmentioning

confidence: 99%

Advances in optoplasmonic sensors – combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

et al. 2017

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“…21,22 Recently, GeSn microdisk resonators were presented 23 showing whispering-gallery-mode (WGM) resonances. The investigated layer stack consisted of Ge/Ge0.92Sn0.08/Ge quantum wells pseudomorphically grown on a sacrificial Ge layer.…”

Section: Introductionmentioning

confidence: 99%

Optically Pumped GeSn Microdisk Lasers on Si

et al. 2016

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The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry−Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm 2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge 0.915 Sn 0.085 alloy where Γ and L valleys have the same energies. Moreover, the observed cavity modes are identified and modeled.

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“…This phenomenon manifests itself when at least one of the elements forming the alloy preferentially occupies or avoids specific lattice sites. This induces short-range order in the lattice with an impact on the basic properties of the alloyed semiconductors [3][4][5][6][7].The recent progress in developing Sn-rich group IV (SiGeSn) ternary semiconductors and their integration in a variety of low dimensional systems and devices have revived the interest in elucidating the atomistic-level properties of monocrystalline alloys [9][10][11][12][13][14][15][16][17][18][19][20]. Interestingly, unlike…”

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confidence: 99%

Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors

et al. 2017

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The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in nonequilibrium epitaxial Sn-rich group IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools including frequency distribution analysis, partial radial distribution functions, and nearest neighbor analysis were employed in order to evaluate and compare the behavior of the three elements to their spatial distributions in an ideal solid solution. This atomistic-level analysis provided clear evidence of an unexpected repulsive interaction between Sn and Si leading to the deviation of Si atoms from the theoretical random distribution. This departure from an ideal solid solution is supported by first principles calculations and attributed to the tendency of the system to reduce its mixing enthalpy throughout the layer-by-layer growth process. 2The assumption that the arrangement of atoms within the crystal lattice is perfectly random is a broadly used approximation to establish the physical properties of semiconductor alloys. This approximation allows one to estimate rather accurately certain thermodynamic as well as material parameters like the excess enthalpy of formation, Vegard-like lattice parameters, and band gaps that are smaller than the composition weighted average (optical bowing). However, it has been proposed that some ternary semiconductors can deviate from this assumed perfect solid solution. Indeed, both calculations and experiments suggested the presence of local atomic order in certain III-V alloys [1][2][3][4][5][6][7][8]. This phenomenon manifests itself when at least one of the elements forming the alloy preferentially occupies or avoids specific lattice sites. This induces short-range order in the lattice with an impact on the basic properties of the alloyed semiconductors [3][4][5][6][7].The recent progress in developing Sn-rich group IV (SiGeSn) ternary semiconductors and their integration in a variety of low dimensional systems and devices have revived the interest in elucidating the atomistic-level properties of monocrystalline alloys [9][10][11][12][13][14][15][16][17][18][19][20]. Interestingly, unlike III-V semiconductors, achieving a direct bandgap in Si GeSn requires a sizable incorporation of Sn 10 . % , which is significantly higher than the equilibrium solubility (<1 at.%). Understanding the atomic structure of these metastable alloys is therefore imperative for implementing predictive models to describe their basic properties. With this perspective, we present a first study of the atomic order in Si Ge Sn alloys (x and y in 0.04 0.19 and 0.02 0.12 range, respectively). We employed Atom Probe Tomography (APT) which allows atomistic level investigations [21][22][23][24] and statistical tools to analyze the three-dimensional (3-D)distributions of the three elements. This analysis unraveled an un...

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Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Cited by 97 publications

References 60 publications

Advances in optoplasmonic sensors – combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

Advances in optoplasmonic sensors – combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

Optically Pumped GeSn Microdisk Lasers on Si

Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors

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