Demonstration of 3500-V 4H-SiC Lateral MOSFETs

Lee, Wen-Shan; Lin, C. T.; Yang, Ming‐Hsien; Chen, Huang-Chin; Gong, Jeng; Zhao, Feng

doi:10.1109/led.2010.2101041

Cited by 25 publications

(14 citation statements)

References 13 publications

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“…The University of Tokyo has reported a lateral DMOSFET (LDMOSFET) with its blocking voltage and specific on-resistance of 1.5 kV and 54 mΩ⋅cm 2 , respectively [20]. A breakdown voltage of 3,520 V was achieved for the 4H-SiC lateral MOSFETs with specific on-resistance of 600 mΩ⋅cm 2 [21]. This is the best result for SiC LDMOSFET.…”

Section: Silicon Carbide Mosfetsmentioning

confidence: 89%

Novel Developments and Challenges for the SiC Power Devices

Yang¹,

Duan²,

Yuan³

et al. 2015

Advanced Silicon Carbide Devices and Processing

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Silicon Carbide SiC is believed to be a revolutionary semiconductor material for power devices of the future many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent developments of SiC power devices are discussed. The first part is focused on SiC power diodes including SiC Schottky barrier diode S"D , SiC PiN diodes PiN, SiC junction/ Schottky diodes J"S , then SiC UMOSFETs, DMOSFETs and several MESFETs are introduced, and the third part is about SiC bipolar devices such as "JT and IG"T.Finally, the challenges during the development of SiC power devices, especially about its material growth and packaging are discussed.

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Section: Silicon Carbide Mosfetsmentioning

confidence: 89%

Novel Developments and Challenges for the SiC Power Devices

Yang¹,

Duan²,

Yuan³

et al. 2015

Advanced Silicon Carbide Devices and Processing

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“…The development and maturity of the SiC power device and integrated circuit technology has paved the way for the emergence and development of SiC power integrated circuits (ICs), which will empower many applications, such as automotive, industrial, energy harvesting and power conditioning [10]. In SiC power ICs, the lateral SiC power MOSFET is a crucial component, because it is easy to be integrated with the low voltage CMOS devices and other devices [11]- [13]. Recently, the SiC lateral MOSFETs with reduced surface field (RESURF) structure and field-plate structure have been proposed to improve the breakdown voltages and/or reduce the on-state resistances [5], [10], [13]- [17].…”

Section: ⅰ Introductionmentioning

confidence: 99%

A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique

Kong

Gao

et al. 2022

IEEE J. Electron Devices Soc.

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An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed SiC LDMOS device, a double-trench gate is introduced to reduce the channel region resistance. And a p-type variation lateral doping (VLD) region is also employed in the drift region, which not only optimizes the surface electric field and improves the breakdown voltage, but also increases the doping concentration of the N-drift region, resulting in a low drift region resistance. So that, the proposed device achieves an ultra-low specific on-resistance (Ron,sp). Numerical Simulation results show that the Ron,sp of the proposed SiC LDMOS is 3.5 mΩcm 2 with a breakdown voltage of ～1460V, which is reduced by more than 46% compared with the conventional field-plate SiC LDMOS with a Ron,sp of 6.6 mΩcm 2 and a breakdown voltage of ～ 1210V. The transconductance of the proposed device is improved greatly. And the trade-off relationship between the Ron,sp and the breakdown voltage is also significantly improved compared with those of the conventional device and the previous literature.

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“…[5] Significant progress in 4H-SiC MOSFETs has been demonstrated recently, with the fabrication of accumulation-mode MOSFETs (ACCUFETs), [1] UMOSFET, [2,6] DMOSFET, [7][8][9][10] and RESURF MOSFET. [11] SiC lateral MOSFETs are also very attractive as highfrequency power transistors, which can favorably compete with Si lateral MOSFET. [11,12] SiC lateral devices have a distinctive advantage of being able to be integrated with other devices, reducing cost, and enhancing overall circuit performance.…”

Section: Introductionmentioning

confidence: 99%

“…[11] SiC lateral MOSFETs are also very attractive as highfrequency power transistors, which can favorably compete with Si lateral MOSFET. [11,12] SiC lateral devices have a distinctive advantage of being able to be integrated with other devices, reducing cost, and enhancing overall circuit performance. [11,13] The growth of high-quality gate oxides (SiO 2 ) with abrupt SiC/SiO 2 interfaces, containing a low density of interface traps D it , is crucial for the fabrication of reliable MOSFETs with high channel mobility on 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

Song

Tang

et al. 2016

Chinese Phys. B

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In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSF-FETs) have been fabricated and characterized. A sandwich-(nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO 2 were examined by the measurement of HF I-V , G-V , and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 10 11 eV −1 •cm −2 , the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm 2 •V −1 •s −1 , and the maximum peak field-effect mobility of 38 cm 2 •V −1 •s −1 was achieved in fabricated lateral 4H-SiC MOSFFETs.

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Demonstration of 3500-V 4H-SiC Lateral MOSFETs

Cited by 25 publications

References 13 publications

Novel Developments and Challenges for the SiC Power Devices

Novel Developments and Challenges for the SiC Power Devices

A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

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