Demonstration of 12.5-Gbps Optical Interconnects Integrated with Lasers, Optical Splitters, Optical Modulators and Photodetectors on a Single Silicon Substrate

Urino, Yutaka; Noguchi, Yoshiji; Noguchi, Masataka; Imai, Masahiko; Yamagishi, M; Saitou, Shigeru; Hirayama, Naoki; Takahashi, Masayuki; Takahashi, Hiroyuki; Saito, Emiko; Okano, Makoto; Shimizu, Takanori; Hatori, Nobuaki; Ishizaka, Masashige; Yamamoto, Tsuyoshi; Baba, Toshihide; Akagawa, Takeshi; Akiyama, Suguru; Usuki, Tatsuya; Okamoto, Daisuke; Miura, Makoto; Fujikata, Junichi; Shimura, Daisuke; Okayama, Hideaki; Yaegashi, Hiroki; Tsuchizawa, Tai; Yamada, Koji; Mori, Masahiko; Horikawa, Tsuyoshi; Nakamura, Takahiro; Arakawa, Yasuhiko

doi:10.1364/eceoc.2012.tu.4.e.1

Cited by 14 publications

(14 citation statements)

References 2 publications

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“…However, the integration of optoelectronic devices on silicon substrate, such as lasers and PDs, is the key issue for on-chip optical interconnects. Several approaches for on-chip optical interconnect integrated with lasers and PDs are proposed, such as evanescent wave coupling [4] and butt-joint coupling [5]. In the evanescent wave coupling, the threshold current is 175 mA and the maximum output power of 29 mW [4].…”

Section: Introductionmentioning

confidence: 99%

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On-Chip Optical Interconnects Integrated with Laser and Photodetector Using Three-Dimensional Silicon Waveguides

Shen

Chen

Chang

et al. 2014

Optical Fiber Communication Conference

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Section: Introductionmentioning

confidence: 99%

“…In the evanescent wave coupling, the threshold current is 175 mA and the maximum output power of 29 mW [4]. In the butt-joint coupling, the threshold current is 50 mA and the total optical power loss is 18dB [5]. Such lower optical coupling efficiency and higher power consumption are unfavorable for on-chip optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Optical Interconnects Integrated with Laser and Photodetector Using Three-Dimensional Silicon Waveguides

Shen

Chen

Chang

et al. 2014

Optical Fiber Communication Conference

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“…Of course, the Si platform is very reliable, and has superior capabilities for cost-effective mass production. Using this technology, thus, we can significantly reduce the size of photonic devices and integrate them with high density [3].…”

Section: Introductionmentioning

confidence: 99%

Silicon-Germanium-Silica Monolithic Photonic Integration Platform for High-Performance Optical Data Communication Systems

Yamada¹,

Tsuchizawa²,

Nishi³

et al. 2014

ECS Trans.

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For practical data communications applications highly-integrated silicon-based photonic devices, we have developed a silicongermanium-silica monolithic photonic integration platform, on which high-performance silica-based passive devices and compact, high-speed silicon-based dynamic/active devices can be monolithically integrated. In the Si-Ge-silica monolithic integration, it is important to deposit index-controllable silica at a low temperature, so as not to damage the Si-and Ge-based active/dynamic devices. Using this platform, various kind of photonic devices have been integrated on a small silicon ship. On this photonic platform, moreover, high-speed electronic circuits can also be integrated.

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“…Heterogeneous integration [17], [18] and off-chip assembly [19]- [21] methods are generally used to integrate III/V materials on the silicon chip. In the heterogeneous integration, III/V material is heterogeneously integrated on the silicon chip using molecular wafer bonding or divinylsiloxane-benzocyclobutene (DVS-BCB) adhesive wafer bonding.…”

Section: Introductionmentioning

confidence: 99%

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

et al. 2014

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A chip-level optical interconnect module combined with a vertical-cavity surfaceemitting laser (VCSEL) chip, a photodetector (PD) chip, a driver integrated circuit (IC), and an amplifier IC on a silicon-on-insulator (SOI) substrate with 3-D guided-wave paths is experimentally demonstrated. Such an optical interconnect is developed for the signal connection in multicore processors or memory-to-processor interfaces. The 3-D guided-wave path, consisting of silicon-based 45 microreflectors and trapezoidal waveguides, is used to connect the optical signal between transmitter and receiver. In this paper, the VCSEL and PIN PD chips are flip-chip integrated on a SOI substrate to achieve complete chip-level optical interconnects. Due to the unique 3-D guided-wave path design, a higher laser-to-PD optical coupling efficiency of À2.19 dB and a larger alignment tolerance of AE10 m for the VCSEL/PD assembly are achieved. The measured laser-to-PD optical transmission efficiency can reach À2.19 dB, and the maximum optical power and threshold current of VCSEL is 3.27 mW and 1 mA, respectively. To verify the data transmission, the commercial driver IC and amplifier IC are assembled upon the silicon chip, and the error-free data transmission of 10 Gbps can be achieved when the VCSEL is operated at the driving current of 9 mA.

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Demonstration of 12.5-Gbps Optical Interconnects Integrated with Lasers, Optical Splitters, Optical Modulators and Photodetectors on a Single Silicon Substrate

Cited by 14 publications

References 2 publications

On-Chip Optical Interconnects Integrated with Laser and Photodetector Using Three-Dimensional Silicon Waveguides

On-Chip Optical Interconnects Integrated with Laser and Photodetector Using Three-Dimensional Silicon Waveguides

Silicon-Germanium-Silica Monolithic Photonic Integration Platform for High-Performance Optical Data Communication Systems

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

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