Delicate tuning of epitaxial VO2 films for ultra-sharp electrical and intense IR optical switching properties

Makarevich, A. M.; Sobol, Alexander G.; Sadykov, Ilia I.; Sharovarov, D. I.; Amelichev, V. A.; Tsymbarenko, Dmitry; Boytsova, O. V.; Kaul, A.R.

doi:10.1016/j.jallcom.2020.157214

Cited by 11 publications

(9 citation statements)

References 31 publications

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“…A number of gas-phase deposition methods have been utilized to form VO 2 (M 1 ) films including PLD, , MOCVD, , magnetron sputtering, , ALD, , and MBE. , However, most of these techniques require expensive vacuum equipment, unsuitable for large-scale manufacturing of VO 2 -based devices. Recently, more cost-effective, high-yield, and flexible solution-based deposition approaches, such as sol–gel, , hydro- and solvothermal crystallization, , polymer-assisted deposition, , and inkjet printing technology, , have been adopted for deposition of thin VO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Ivanov

Tatarenko

Gorodetsky

et al. 2021

ACS Appl. Nano Mater.

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We report a feasible and high-throughput method for high-quality W-doped VO 2 nanostructured epitaxial films on rsapphire substrate fabrication. Single-phase, smooth vanadium dioxide thin films with uniform distribution of tungsten (up to 2.3%) are formed using the solvothermal process from ethylene glycol/water V 4+ and W 6+ solutions. Compositional analysis by X-ray photoelectron and energy-dispersive X-ray spectroscopy (XPS and EDX, respectively); structural analysis (X-ray diffraction, Raman spectroscopy, selected area electron diffraction (SAED)); and detailed analysis of the surface morphology and substrate−film interface using scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy (SEM, AFM, HRTEM, respectively) confirm the formation of nanoscale (50−60 nm) epitaxial W:VO 2 (M 1 ) on r-sapphire with epitaxial relationships (100)VO 2 ∥(101̅ 2)Al 2 O 3 and [010]VO 2 ∥[011̅ 0]Al 2 O 3 . The nanostructured films demonstrate excellent terahertz (THz) transmission properties: a phase transition temperature of 31 °C, a huge THz modulation depth of over 60%, and broad bandwidth (≥2 THz) operation. Hence, they can be efficiently used as active material for tunable THz manipulation devices.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Ivanov

Tatarenko

Gorodetsky

et al. 2021

ACS Appl. Nano Mater.

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“…19,29 Thus, present results suggest that VO 2 films reveal rather disordered growth after certain thickness. 31 Littlejohn et al suggested that such a disordered component in the XRC for VO 2 (020) comes from 3D crystalline islands whose out-of-plane axes deviate from the substrate normal direction. 29 Figure 3(a) shows the R-T characteristics.…”

Section: Resultsmentioning

confidence: 99%

Approaching ultrathin VO2 films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

Okimura

Sakai

Kuwahara

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ultrathin VO 2 films with insulator-metal transition (IMT) were successfully fabricated on sapphire (001) substrates by utilizing radio frequency-biased reactive sputtering. We realized a 6 nm-thick VO 2 film that shows resistance change over 2 orders of magnitude. Microscopic observations combined with energy dispersive x-ray analyses revealed characteristic networking morphology in VO 2 films with thickness up to around 10 nm. It was found through micro-Raman analyses that a 30 nm-thick film possessed flat surface and ordered lattice with strong in-plane tensile stress. We evaluated the thickness dependence of optical switching performance for infrared-light. The results suggest that the thickness of the VO 2 films should be carefully selected for realizing required performances of optical switching, which depends on not only IMT but also characteristic morphological aspects.

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“…For example, Makarevich et al. [ 51 ] optimized the annealing process of VO 2 films, and achieved the balance between dense fusion and structural continuity of the film under the annealing condition of 600 °C for 60 minutes, and successfully prepared VO 2 films with high hysteretic sharpness, in which ∆H was only 0.7 °C. Zeng et al.…”

Section: Changes In Optical and Electrical Properties Caused By Vo2 P...mentioning

confidence: 99%

An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics

Liu,

Chai

et al. 2023

Adv Elect Materials

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Under physical conditions such as TC = 68 °C, Vanadium dioxide (VO2) undergoes a reversible transformation from a monoclinic phase to a tetragonal rutile phase. This transformation is accompanied by a series of changes in physical properties, including transmittance, conductivity, and refractive index, which make it an excellent functional material. Based on this, VO2 has been extensively researched and applied in the fields of electronics and optics, yielding remarkable results and making it a hot research material. This paper reviews the phase transition mechanisms and optical/electrical properties of VO2, as well as its phase transition hysteresis. From the application perspective, this paper summarizes the modulation content under various external excitations and the element doping effects. Finally, this paper summarizes the classic VO2‐based devices, and points out the development direction and potential of VO2 in optics and electronics. This review provides a systematic summary of VO2, which is useful for its practical applications.

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Delicate tuning of epitaxial VO2 films for ultra-sharp electrical and intense IR optical switching properties

Cited by 11 publications

References 31 publications

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Approaching ultrathin VO2 films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics

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Delicate tuning of epitaxial VO2 films for ultra-sharp electrical and intense IR optical switching properties

Cited by 11 publications

References 31 publications

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Approaching ultrathin VO2 films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching

An Interesting Functional Phase Change Material VO2: Response to Multivariate Control and Extensive Applications in Optics and Electronics

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Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics