Degradation of silicone gel by partial discharges due to different defects

Ebke, T.; Khaddour, A.; Peier, D.

doi:10.1049/cp:20000505

Cited by 32 publications

(26 citation statements)

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“…Under such circumstances, the dielectric gel and the ceramic substrates at the discharge location are completely degraded and cannot be recovered. This occurrence is similar to the finding reported in [10]. Considering all, the sample D is qualitatively ranked as 'developing fault'.…”

Section: Pd Pattern Analysissupporting

confidence: 88%

“…Consequently, the dielectric materials that are employed in IGBT modules have undergone several enhancements and design improvements [8,9]. Despite all, the PD phenomenon inevitably occurs in the cavities, voids that emerge during the manufacturing process [10]. Although the insulating material could be used with reduced dielectric capabilities, in due course of time, the electrical and partial discharges causes mechanical erosion, suffers increase in the temperature at the discharge site which eventually leads to several gas formation, thereby reducing the lifetime of the dielectric material [10].…”

Section: Present Status Of Pd In Igbt Modulesmentioning

confidence: 99%

“…The major reasons of PD in an IGBT module is attributed to the electric field enhancements that arises at the unsymmetrical metallization edges, bubbles in dielectric gel, voids and cavities that forms at the juncture of ceramic substrate and dielectric gel [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Multiple options are available for assessment and monitoring PD in electric motors and other power conversion devices.…”

Section: Introductionmentioning

confidence: 99%

“…It has been experimentally identified that dielectric gel at the PD location or in the discharge path might initially suffer deviation in its properties; however, its original condition might be reinstated in due course of time [10]. Nevertheless, repeated and elevated levels of PD would eventually degrade the dielectric gel causing premature failure of IGBT based power modules [10][11][12][13][14]. So, it is natural to consider that even a very low level of PD would compromise in operating conditions and henceforth its reliability.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Arumugam

Gorchakov

Schoenemann

2015

IEEE Trans. Dielect. Electr. Insul.

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This paper investigates on dielectric condition assessment of high power Insulated Gate Bipolar Transistor (IGBT) modules through modern dielectric and diagnostic test methods. Two groups of IGBT samples (new and aged) are selected for this purpose. The new IGBT samples are grouped as 'set-1/virgin' and marked as 'A', 'B', 'C', 'D' and 'E' respectively. Amongst all, a fault (electric puncture) is introduced into the sample 'E'. The samples 'A' and 'B' are maintained virgin while samples 'C', 'D' and 'E' are subjected to partial discharge measurements as recommended by IEC60270.The samples are qualitatively ranked based on their PD level. Subsequently, the dielectric condition of each sample is measured and analyzed over a wide span and frequency. Following this, similar experiments are carried out on IGBT samples that were aged under service and their behaviour over a wide frequency is analyzed. In conclusion, the present study might provide an opportunity in improvement of diagnostic and quality control test methods that are currently exercised on IGBT modules and power conversion devices. Also, these findings enable discrimination of electrical discharges caused by IGBT modules in power conversion equipments which might help in accurate determination of their dielectric condition and reliability.

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Section: Pd Pattern Analysissupporting

confidence: 88%

Section: Present Status Of Pd In Igbt Modulesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Arumugam

Gorchakov

Schoenemann

2015

IEEE Trans. Dielect. Electr. Insul.

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“…This is due to the test being carried out with all terminals being bonded to high voltage while in operation they can, depending on the exact nature of the switch position, be at different potentials [3]. Silicone gel should not age under the presence of an electric field alone [4] but may vary in performance according to the environmental conditions. For example, ambient temperature is known to have a significant impact on the dielectric performance of materials such as silicone gel [5,6].…”

Section: Introductionmentioning

confidence: 99%

Partial discharge control in a power electronic module using high permittivity non-linear dielectrics

Wang

Cotton

Robertson³

et al. 2010

IEEE Trans. Dielect. Electr. Insul.

106

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High electric fields at the edge of the substrate metallization can give rise to partial discharge within power electronic modules and can lead to eventual failure. This paper examines the use of silicone gels filled with barium titanate to reduce the electric field enhancement at the edge of substrate metallization and therefore increase partial discharge inception voltages. The barium titanate filled gel produces a dielectric in which the relative permittivity is increased over a plain gel and that also exhibits a dependence on electric field. The theoretical electric field reduction that can be achieved in a power electronic module through the use of filled gels is demonstrated and compared against experimental measurements including the trial of the technique in some commercial modules. As promising results are achieved, consideration is also given to the effect of the barium titanate filler on the viscosity of the gel and the thermal conductivity, two key manufacturing issues.

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Comparison of IGBT short-circuit failure “ohmic mode”: Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters

Richardeau¹,

Dou²,

Sarraute³

et al. 2011

Microelectronics Reliability

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Degradation of silicone gel by partial discharges due to different defects

Cited by 32 publications

References 0 publications

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Partial discharge control in a power electronic module using high permittivity non-linear dielectrics

Comparison of IGBT short-circuit failure “ohmic mode”: Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters

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