Degradation of performance in MESFETs and HEMTs: simulation and measurement of reliability

Feng, Ting; Strifas, Nickolaos; Christou, A.

doi:10.1016/s0026-2714(98)00123-1

Cited by 5 publications

(2 citation statements)

References 8 publications

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“…The probability of significant gate-metal diffusion is minimal in this study, given that the temperature during stress is well below the threshold of ∼200 °C for the onset of this process in GaAs MESFETs and PHEMTs. [19][20][21] The increase in V th suggests the activation of modest densities of acceptor-like defects and/or passivation of donor-like defects via electron capture at positively charged centers under ON-state bias conditions at elevated temperatures. 13 No significant change in peak transconductance G M was observed during the stressing sequence, indicating that the charged defects responsible for the V th shifts evidently are not located close enough to the two-dimensional electron gas (2DEG) to scatter carriers strongly.…”

Section: A Current-voltage Measurementsmentioning

confidence: 99%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.

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Section: A Current-voltage Measurementsmentioning

confidence: 99%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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“…In this paper we have shown the results of our investigation of the ESD stressed Ga As MESFETs. The study of behavior of MESFET's under ESD stress conditions is significant for better understanding physical processes leading to the degradation under these conditions, as well for finding corrective actions leading to greater robustness of MESFET's to ESD, electrical over stress ( EOS ) events, electrical cycling like in life tests [7] or temperature accelerated testing [8]. ESD pulses have higher voltage and shorter time then other pulses but effects in devices according to dissipated energy and increased temperature could be comparable.…”

Section: Introductionmentioning

confidence: 99%